SKW30N60 Infineon Technologies, SKW30N60 Datasheet
SKW30N60
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SKW30N60 Summary of contents
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... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. for target applications http://www.infineon.com/igbt Marking C CE(sat) j 2.5V K30N60 PG-TO-247-3 150 C Symbol jmax jmax SKW30N60 G PG-TO-247-3 Package Value 600 112 112 41 30 112 250 260 -55...+150 Rev. 2_2 C E Unit ° ...
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... V 150 =20V =20V, I =30A =25V f=1MHz =30A =15V =15V 0V 150 SKW30N60 Max. Value Unit 0.5 K Value Unit min. Typ. max. 600 - - V 1.7 2.1 2.4 - 2.5 3.0 1.2 1.4 1.8 - 1.25 1. 3000 - - 100 1600 1920 pF - 150 180 - 92 110 - 140 182 ...
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... Conditions T = 150 =30A 80nH , 00p Energy losses include E “tail” and diode reverse recovery 150 =30A 200A SKW30N60 Value Unit min. typ. max 291 349 - 0.64 0. 0.65 0.85 - 1.29 1.62 - 400 - 368 - - 610 - 180 - A/ s Value Unit min. typ. max ...
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... CE Figure 2. Safe operating area ( 60A 50A Limited by bond wire 40A 30A 20A 10A 0A 125°C 25°C 50° Figure 4. Collector current as a function of case temperature (V 15V SKW30N60 200 s 1ms DC 10V 100V 1000V - EMITTER VOLTAGE = 150 75°C 100°C 125°C , CASE TEMPERATURE ...
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... Figure 6. Typical output characteristics (T = 150 C) j 4.0V 3.5V -55°C 3.0V 2.5V 2.0V 1.5V 1.0V 8V 10V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKW30N60 =20V 15V 13V 11V COLLECTOR EMITTER VOLTAGE I = 60A 30A C 0°C 50°C 100°C 150° ...
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... 0/+15V Dynamic test circuit in Figure E) 5.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 2.0V 150°C -50°C T Figure 12. Gate-emitter threshold voltage as a function of junction temperature = 0/+15V 0.7mA SKW30N60 t d(off d(on GATE RESISTOR G = 150 400V 30A, C max. typ. ...
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... K/W D=0.5 0 K/W 0 0. K/W 0. K/W off single pulse -4 10 K/W 1µs 150°C Figure 16. IGBT transient thermal impedance as a function of pulse width = 0/+15V SKW30N60 and E include losses off GATE RESISTOR G = 150 400V 30A 0.3681 0.0555 -3 0.0938 1.26*10 -4 0.0380 1.49*10 ...
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... V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (V 600V SKW30N60 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 12V 14V 16V 18V 20V , - GATE EMITTER VOLTAGE ...
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... F Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 200V Dynamic test circuit in Figure E) 9 SKW30N60 I = 60A 30A 15A F 300A/ s 500A/ s 700A/ s 900A DIODE CURRENT SLOPE = 125 C, j 300A/ s ...
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... Figure 27. Diode transient thermal impedance as a function of pulse width ( 2.0V 1.5V 1.0V 1.5V 2.0V -40°C T Figure 26. Typical diode forward voltage as a function of junction temperature , ( s ) 0.157 -2 2.08*10 -3 2.29*10 -4 2.04*10 -5 1.03* SKW30N60 I = 60A 30A F 0°C 40°C 80°C 120°C , JUNCTION TEMPERATURE j Rev. 2_2 Sep 08 ...
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... SKW30N60 MAX 0.203 0.099 Z8B00003327 0.083 0.052 0 0.095 0.085 0.133 0.123 0.027 0.831 7.5mm 0.695 0.053 0.631 0.557 0.201 0.102 3 0 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Published by Infineon Technologies AG, SKW30N60 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity =180nH =900pF. Rev. 2_2 Sep 08 ...
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... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. SKW30N60 13 Rev. 2_2 Sep 08 ...