SPB80N03 Siemens Semiconductor Group, SPB80N03 Datasheet

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SPB80N03

Manufacturer Part Number
SPB80N03
Description
SIPMOS Power Transistor
Manufacturer
Siemens Semiconductor Group
Datasheet

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Features
Type
SPP80N03
SPB80N03
Maximum Ratings, at T j = 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Semiconductor Group
SIPMOS
D
S
Enhancement mode
175°C operating temperature
N channel
Avalanche rated
d v /d t rated
C
C
C
jmax
C
= 80 A, V
= 80 A, V
= 25 °C,
= 100 °C
= 25 °C
= 25 °C
= 175 °C
DS
DD
1)
Power Transistor
= 24 V, d i /d t = 200 A/µs,
= 25 V, R
Package
P-TO220-3-1 Q67040-S4734-A2
P-TO263-3-2
GS
= 25
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Ordering Code
Q67040-S4734-A3
jmax
1
Symbol
I
I
E
E
d v /d t
V
P
T
Dpulse
D
AS
AR
GS
tot
j ,
Packaging
Tube
Tabe and Reel
T
stg
-55... +175
55/175/56
Value
V
R
I
320
700
300
D
80
80
30
20
DS
6
DS(on)
Pin 1 Pin 2 Pin 3
G
SPP80N03
0.006
D
30
80
Unit
A
mJ
kV/µs
V
W
°C
V
A
S

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SPB80N03 Summary of contents

Page 1

... SIPMOS Power Transistor Features N channel Enhancement mode Avalanche rated rated 175°C operating temperature Type Package SPP80N03 P-TO220-3-1 Q67040-S4734-A2 SPB80N03 P-TO263-3-2 Maximum Ratings °C, unless otherwise specified Parameter Continuous drain current ° 100 °C C Pulsed drain current ° ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leded SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics °C, unless otherwise ...

Page 3

Electrical Characteristics °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance DS(on)max D Input capacitance MHz ...

Page 4

Electrical Characteristics °C, unless otherwise specified Parameter Dynamic Characteristics Gate to source charge Gate to drain charge ...

Page 5

Power Dissipation tot C SPP80N03 320 W 240 200 160 120 100 120 140 160 °C 190 Safe operating area ...

Page 6

Typ. output characteristics parameter µs p SPP80N03 190 P = 300W tot 160 140 120 100 ...

Page 7

Drain-source on-resistance DS(on) j parameter : SPP80N03 0.015 0.012 0.011 0.010 0.009 0.008 98% 0.007 0.006 typ 0.005 0.004 0.003 0.002 0.001 0.000 -60 - ...

Page 8

Avalanche Energy parameter 700 mJ 600 550 500 450 400 350 300 250 200 150 100 100 ...

Page 9

Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only ...

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