SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet
SPD06N80C3
Specifications of SPD06N80C3
SP000077606
SPD06N80C3INTR
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SPD06N80C3 Summary of contents
Page 1
... V =50V D DD Avalanche current, repetitive t Gate source voltage Power dissipation 25°C C Operating and storage temperature Rev. 2.3 in TO252 Ordering Code Q67040-S4352 = 25°C, unless otherwise specified jmax 1) limited jmax limited jmax Page 1 SPD06N80C3 DS(on Marking 06N80C3 Symbol Value 3 puls 230 ...
Page 2
... DS I =800V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =3.8A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPD06N80C3 Value Unit 50 V/ns Values Unit min. typ. max 1.5 K 260 °C Values Unit min. typ. max. 800 - - V - ...
Page 3
... GS =0V to 480V o(tr) =400V d(on =6A =125° d(off =640V =640V, I =6A 10V =640V (plateau) DD Page 3 SPD06N80C3 Values min. typ. max 785 - 390 - =0/10V 3 * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS 2005-10-05 Unit - ...
Page 4
... /dt=100A/µ rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPD06N80C3 Values min. typ 520 = 400 Value typ. 0.0001172 0.000447 0.0006303 0.001828 0.004786 0.046 E xternal H eatsink T case Unit max 1.2 ...
Page 5
... Power dissipation tot C SPD06N80C3 100 Transient thermal impedance thJC p parameter K Rev. 2.3 2 Safe operating area parameter : °C 100 120 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPD06N80C3 ) DS =25° 0.001 0. 0 =25° µ 20V 10V 2005-10- ...
Page 6
... Rev. 2.3 6 Typ. drain-source on resistance R DS(on) parameter 20V 10V 3 5.5V 2 4.5V 1 Typ. transfer characteristics parameter °C 100 180 T j Page 6 SPD06N80C3 =f =150° 5.5V 4. DS(on)max = 10 µs p 25°C 150° 2005-10- 10V 20V ...
Page 7
... T J(Start) = 125° Rev. 2.3 10 Forward characteristics of body diode parameter Gate 12 Avalanche energy E AS par J(Start) = 25° µ Page 7 SPD06N80C3 ) µ SPD06N80C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1 250 200 175 150 125 100 100 2 ...
Page 8
... Rev. 2.3 14 Avalanche power losses parameter: E 200 W 160 140 120 100 100 °C 180 Typ =f(V oss µJ 500 600 V 800 V DS Page 8 SPD06N80C3 =0.2mJ stored energy oss ) 100 200 300 400 500 2005-10- 600 V 800 V DS ...
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... Definition of diodes switching characteristics Rev. 2.3 Page 9 SPD06N80C3 2005-10-05 ...
Page 10
... PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.3 Page 10 SPD06N80C3 2005-10-05 ...
Page 11
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 Page 11 SPD06N80C3 2005-10-05 ...