SPP80N03 Siemens Semiconductor, SPP80N03 Datasheet

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SPP80N03

Manufacturer Part Number
SPP80N03
Description
SIPMOS Power Transistor
Manufacturer
Siemens Semiconductor
Datasheet

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Features
Type
SPP80N03
SPB80N03
Semiconductor Group
SIPMOS
Maximum Ratings, at T j = 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode d v /d t
I
T
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
www.DataSheet4U.com
D
S
Enhancement mode
175°C operating temperature
N channel
Avalanche rated
d v /d t rated
C
C
C
jmax
C
= 80 A, V
= 80 A, V
= 25 °C,
= 100 °C
= 25 °C
= 25 °C
= 175 °C
DS
DD
1)
Power Transistor
= 24 V, d i /d t = 200 A/µs,
= 25 V, R
Package
P-TO220-3-1 Q67040-S4734-A2
P-TO263-3-2
GS
= 25
Product Summary
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
Ordering Code
Q67040-S4734-A3
jmax
1
Symbol
I
I
E
E
d v /d t
V
P
T
Dpulse
D
AS
AR
GS
tot
j ,
Packaging
Tube
Tabe and Reel
T
stg
-55... +175
55/175/56
Value
V
R
I
320
700
300
D
80
80
30
20
DS
6
DS(on)
Pin 1 Pin 2 Pin 3
G
SPP80N03
0.006
D
30
80
Unit
A
mJ
kV/µs
V
W
°C
V
A
S

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SPP80N03 Summary of contents

Page 1

... Continuous drain current Ordering Code Packaging Tube Q67040-S4734-A3 Tabe and Reel Symbol Dpulse jmax tot SPP80N03 0.006 R DS(on Pin 1 Pin 2 Pin Value 80 80 320 700 300 -55... +175 stg 55/175/56 V ...

Page 2

... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group Symbol R thJC R thJA R thJA Symbol V (BR)DSS = 25 ° GS(th) I DSS I GSS R DS(on) 2 SPP80N03 Values Unit min. typ. max 0.5 K Values Unit min. typ. max ...

Page 3

... R = 2.5 G Fall time 2.5 G Semiconductor Group Symbol iss C oss C rss t d(on d(off SPP80N03 Values Unit min. typ. max 3970 5000 pF - 1920 2500 - 775 1000 - ...

Page 4

... Reverse recovery charge 100 A/µ Semiconductor Group Symbol (plateau SPP80N03 Values Unit min. typ. max 76.5 - 112 175 - 4 320 - 1.1 1 ...

Page 5

... SPP80N03 54.0µ 100 µ SPP80N03 ) 100 120 140 160 °C 190 ) 0.50 single pulse - 0.20 0.10 0.05 0.02 0.01 0 ...

Page 6

... V 0.002 V 5.0 0.000 Typ. forward transconductance = parameter SPP80N03 ) [ 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8 100 120 A = 25° ...

Page 7

... Coss Crss 0 SPP80N03 = 240 µ 140 °C -60 - 100 ) µ SPP80N03 °C typ 175 °C typ °C (98 175 °C (98%) j 0.4 0.8 1.2 1.6 2.0 max typ min 200 2.4 3 ...

Page 8

... Semiconductor Group Typ. gate charge ) parameter 120 140 °C 180 T j 140 °C 100 200 SPP80N03 ) Gate = puls SPP80N03 V V 0,2 0,8 DS max 100 120 140 DS max 170 nC Q Gate ...

Page 9

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 9 SPP80N03 ...

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