STTH12003 STMicroelectronics, STTH12003 Datasheet

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STTH12003

Manufacturer Part Number
STTH12003
Description
Ultrafast Recovery Rectifier Diode
Manufacturer
STMicroelectronics
Datasheet

Specifications of STTH12003

Insulated Package
ISOTOP
Insulated Voltage
2500 VRMS
Capacitance
< 45 pF

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Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STTH12003TV
Manufacturer:
ST
0
Part Number:
STTH12003TV1
Manufacturer:
ST
Quantity:
78
Part Number:
STTH12003TV1
Manufacturer:
ST
Quantity:
334
Part Number:
STTH12003TV1
Manufacturer:
ST
0
Part Number:
STTH12003TV1
Manufacturer:
ST
Quantity:
20 000
Part Number:
STTH12003TV2
Manufacturer:
ST
0
Part Number:
STTH12003TVI
Manufacturer:
ST
0
MAJOR PRODUCT CHARACTERISTICS
FEATURES AND BENEFITS
DESCRIPTION
Dual rectifiers suited for Switch Mode Power
Supply and high frequency DC to DC converters.
Packaged in ISOTOP, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.
ABSOLUTE RATINGS (limiting values, per diode)
ISOTOP is a registered trademark of STMicroelectronics
October 1999 - Ed: 4D
Symbol
I
COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE
ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY
INSULATED PACKAGE: ISOTOP
Insulated voltage: 2500 V
Capacitance: < 45 pF
LOW INDUCTANCE AND LOW CAPACITANCE
ALLOW SIMPLIFIED LAYOUT
V
F(RMS)
I
I
I
F(AV)
T
RSM
FSM
RRM
Tj
stg
V
trr (max)
Tj (max)
F
V
I
F(AV)
(max)
®
RRM
Repetitive peak reverse voltage
RMS forward current
Average forward current
Surge non repetitive forward current
Non repetitive peak reverse current
Storage temperature range
Maximum operating junction temperature
HIGH FREQUENCY SECONDARY RECTIFIER
RMS
2 x 60 A
150 °C
300 V
70 ns
1 V
Parameter
Tc = 85°C
tp = 10 ms sinusoidal
tp = 100 s square
= 0.5
Per diode
Per device
K2
A1
A2
STTH12003TV
A2
ISOTOP
- 55 to + 150
K1
Value
K1
K2
300
150
120
600
150
60
5
A1
Unit
°C
V
A
A
A
A
C
1/5

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STTH12003 Summary of contents

Page 1

... Storage temperature range Tj Maximum operating junction temperature ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed 300 V 150 ° Parameter Tc = 85° sinusoidal tp = 100 s square STTH12003TV ISOTOP Value 300 150 60 Per diode 120 ...

Page 2

... STTH12003TV THERMAL RESISTANCES Symbol R th (j-c) Junction to case R th (c) When the diodes 1 and 2 are used simultaneously: Tj (diode (diode th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V ** Forward voltage drop F Pulse test : * ms, < 380 s, < evaluate the maximum conduction losses use the following equation ...

Page 3

... Fig. 6: Softness factor (tb/ta) versus dI F values, per diode). S factor 0.6 VR=200V Tj=125°C 0.5 0.4 0.3 0.2 0.1 0.0 0 STTH12003TV Tj=125°C Typical values Tj=25°C Maximum values Tj=125°C Maximum values VFM(V) Peak reverse recovery current versus IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µ ...

Page 4

... STTH12003TV Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference 125°C). 2.4 2.2 2.0 S factor 1.8 1.6 1.4 1.2 1.0 IRM 0.8 0.6 0.4 0.2 Tj(°C) 0 Fig. 9: Forward recovery time versus dI confidence, per diode). tfr(ns) 500 400 300 200 100 dIF/dt(A/µ 100 150 200 250 300 350 400 450 500 4/5 Fig ...

Page 5

... PACKAGE MECHANICAL DATA ISOTOP Ordering code Marking STTH12003TV1 STTH12003TV Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...

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