STTH12003 STMicroelectronics, STTH12003 Datasheet
STTH12003
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... Storage temperature range Tj Maximum operating junction temperature ISOTOP is a registered trademark of STMicroelectronics October 1999 - Ed 300 V 150 ° Parameter Tc = 85° sinusoidal tp = 100 s square STTH12003TV ISOTOP Value 300 150 60 Per diode 120 ...
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... STTH12003TV THERMAL RESISTANCES Symbol R th (j-c) Junction to case R th (c) When the diodes 1 and 2 are used simultaneously: Tj (diode (diode th(j-c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter I * Reverse leakage R current V ** Forward voltage drop F Pulse test : * ms, < 380 s, < evaluate the maximum conduction losses use the following equation ...
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... Fig. 6: Softness factor (tb/ta) versus dI F values, per diode). S factor 0.6 VR=200V Tj=125°C 0.5 0.4 0.3 0.2 0.1 0.0 0 STTH12003TV Tj=125°C Typical values Tj=25°C Maximum values Tj=125°C Maximum values VFM(V) Peak reverse recovery current versus IF=2*IF(av) IF=IF(av) IF=0.5*IF(av) dIF/dt(A/µs) 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µ ...
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... STTH12003TV Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference 125°C). 2.4 2.2 2.0 S factor 1.8 1.6 1.4 1.2 1.0 IRM 0.8 0.6 0.4 0.2 Tj(°C) 0 Fig. 9: Forward recovery time versus dI confidence, per diode). tfr(ns) 500 400 300 200 100 dIF/dt(A/µ 100 150 200 250 300 350 400 450 500 4/5 Fig ...
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... PACKAGE MECHANICAL DATA ISOTOP Ordering code Marking STTH12003TV1 STTH12003TV Cooling method: by conduction (C) Recommended torque value: 1.3 N.m. Maximum torque value: 1.5 N.m. Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics ...