STTH302 STMicroelectronics, STTH302 Datasheet
STTH302
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STTH302 Summary of contents
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... Negligible switching losses Low forward and reverse recovery times High junction temperature DESCRIPTION The STTH302 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications ...
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... STTH302 STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter I * Reverse leakage current Forward voltage drop F Pulse test : * ms, < 380 s, < evaluate the maximum conduction losses use the following equations 0. 0.05 I F(AV) F (RMS) DYNAMIC ELECTRICAL CHARACTERISTICS Symbol Parameter trr Reverse recovery time tfr Forward recovery ...
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... Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 Tj=25°C (Maximum values) 10 1.2 1.4 1.6 1.8 1 Rth(j-a)=Rth(j-l) Rth(j-a)=75°C/W Tamb(° 100 125 tp(s) =tp/T 1.E+00 1.E+01 1.E+02 VR(V) 10 100 STTH302 150 175 T tp 1.E+03 F=1MHz Vosc=30mV Tj=25°C 1000 3/5 ...
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... STTH302 Fig. 7: Reverse recovery time versus dI confidence). trr(ns) 100 Tj=125° Tj=25° dIF/dt(A/µ Fig. 9: Relative variations of dynamic parameters versus junction temperature. IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C] 5.0 IF=3A dIF/dt=200A/µs 4.5 VR=100V 4.0 3.5 3.0 2.5 2.0 1.5 Tj(° ...
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... Package Weight DO-201AD 1.16 g DO-201AD 1.16 g STMicroelectronics GROUP OF COMPANIES http://www.st.com B ØC NOTES D is not controlled over zone E Base qty Delivery mode 600 Ammopack 1900 Tape and reel STTH302 5/5 ...