tc58nvg0s3eta00 TOSHIBA Semiconductor CORPORATION, tc58nvg0s3eta00 Datasheet

tc58nvg0s3eta00

Manufacturer Part Number

tc58nvg0s3eta00

Description

1 Gbit 128m ? 8 Bit Cmos Nand E2prom

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.TC58NVG0S3ETA00.pdf (65 pages)

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TENTATIVE

1 GBIT (128M × 8 BIT) CMOS NAND E

DESCRIPTION

Read-Only Memory (NAND E

The device has two 2112-byte static registers which allow program and read data to be transferred between the

unit (128 Kbytes + 4 Kbytes: 2112 bytes × 64 pages).

input/output as well as for command inputs. The Erase and Program operations are automatically executed making

the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still

cameras and other systems which require high-density non-volatile memory data storage.

FEATURES

•

The TC58NVG0S3E is a single 3.3V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable

The TC58NVG0S3E is a serial-type memory device which utilizes the I/O pins for both address and data

Organization

Modes

Mode control

Number of valid blocks

Power supply

Access time

Program/Erase time

Operating current

Package

Memory cell array

Page size

Block size

Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,

Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read

Serial input/output

Command control

Min 1004 blocks

Max 1024 blocks

Cell array to register 30 µs max

Serial Read Cycle

Auto Page Program

Auto Block Erase

Read (25 ns cycle)

Program (avg.)

Erase (avg.)

Standby

TSOP I 48-P-1220-0.50 (Weight: 0.53 g typ.)

= 2.7V to 3.6V

TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

2112 × 64K × 8

2112 × 8

2112 bytes

(128K + 4K) bytes

25 ns min (CL=100pF)

300 µs/page typ.

2.5 ms/block typ.

30 mA max.

30 mA max

50 µA max

PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.

PROM

TC58NVG0S3ETA00

2010-01-25C

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