TN2219A Fairchild Semiconductor, TN2219A Datasheet

TRANS GP NPN 40V 1A TO-226

TN2219A

Manufacturer Part Number
TN2219A
Description
TRANS GP NPN 40V 1A TO-226
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of TN2219A

Transistor Type
NPN
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Long Body), TO-226
Configuration
Single
Transistor Polarity
NPN
Mounting Style
Through Hole
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
1 A
Maximum Dc Collector Current
1 A
Power Dissipation
1 W
Dc Collector/base Gain Hfe Min
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TN2219A
Manufacturer:
FSC
Quantity:
2 000
Part Number:
TN2219A
Manufacturer:
FAIRCHILD
Quantity:
35 000
1997 Fairchild Semiconductor Corporation
V
V
V
I
T
P
R
R
Symbol
C
Symbol
CEO
CBO
EBO
J
D
This device is for use as a medium power amplifier and switch requiring
collector currents up to 500 mA. Sourced from Process 19. See
PN2222A for characteristics.
*
NPN General Purpose Amplifier
Thermal Characteristics
, T
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Absolute Maximum Ratings*
JC
JA
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
Total Device Dissipation
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
C
TN2219A
B
Derate above 25 C
(TN2222A)
E
Characteristic
TO-226
Parameter
TA = 25°C unless otherwise noted
TA = 25°C unless otherwise noted
TN2219A
Max
125
1.0
8.0
50
-55 to +150
Value
6.0
1.0
40
75
Units
Units
W/ C
C/W
C/W
V
V
V
A
C
W

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TN2219A Summary of contents

Page 1

... Derate above 25 C Thermal Resistance, Junction to Case R JC Thermal Resistance, Junction to Ambient R JA 1997 Fairchild Semiconductor Corporation TO-226 TA = 25°C unless otherwise noted Parameter TA = 25°C unless otherwise noted Value Units 6.0 V 1.0 A -55 to +150 C Max Units TN2219A 1 125 C/W 50 C/W ...

Page 2

Electrical Characteristics Symbol Parameter OFF CHARACTERISTICS V Collector-Emitter Breakdown Voltage* (BR)CEO V Collector-Base Breakdown Voltage (BR)CBO V Emitter-Base Breakdown Voltage (BR)EBO I Collector Cutoff Current CEX I Collector Cutoff Current CBO I Emitter Cutoff Current EBO I Base Cutoff Current ...

Page 3

... TO-226AE Tape and Reel Data ©2000 Fairchild Semiconductor International October 1999, Rev. A1 ...

Page 4

TO-226AE Tape and Reel Data, continued October 1999, Rev. A1 ...

Page 5

TO-226AE Tape and Reel Data, continued October 1999, Rev. A1 ...

Page 6

... TO-226AE Package Dimensions TO-226AE (FS PKG Code 95, 99) ©2000 Fairchild Semiconductor International 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.300 For leadformed option ordering, refer to Tape & Reel data information. October 1999, Rev. A1 ...

Page 7

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...

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