TSH690 ST Microelectronics, Inc., TSH690 Datasheet
TSH690
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TSH690 Summary of contents
Page 1
... Bias pin to adjust the amplification class Power down DESCRIPTION The TSH690 is a wide band RF amplifier, de- signed in advanced bipolar process. At 450 MHz, it features 28dB gain and +13.5dBm (20 mW) out- put power at 3V. At 900 MHz, it features 23 dB gain and +15.5 dBm (35 mW) output power at 3V. ...
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... TSH690 SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Supply Voltage & Bias Voltage CC1 CC2 bias Input Power RF out RF Output Power T Operating Free Air Temperature Range oper T Storage Temperature Range stg OPERATING CONDITIONS Symbol Supply Voltages CC1 CC2 V Bias Voltage ...
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... ELECTRICAL DC CHARACTERISTICS Tamb = 25°C, V connected Parameter Supply Current Vcc = 2V Vcc = 2.7V Vcc = 3V Vcc = 4V Vcc = 5V Rth-(j-a): Junction Ambient Thermal Resistance for SO-8 Package TSH690 DISSIPATION CONSIDERATIONS In order to respect the dissipation limitation of the package, you should consider the following equa- tion amb d with: ...
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... TSH690 ELECTRICAL CHARACTERISTICS AT 450 MHz Tamb = 25°C, V & +2.7V bias Parameter Power gain S21 (P = -20dBm) in Output Power 1dB Compression 3rd Order Intercept Point (f = 430MHz) Reverse Isolation S12 (f = 400MHz) Input Return Loss S11 Noise Figure 1. All min. and max. parameters of this table are garanteed by correlation with 900 MHz tests. ...
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... TSH690 S12 S22 Ang Mag Ang -126.5 0.715 -54.7 170.7 0.631 -64.7 70.1 0.369 -91.3 -141.9 0.253 -100.9 -117.3 0.202 -100.9 162.3 0.203 -92 ...
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... TSH690 TEST CONDITIONS CC1 CC2 Freq S11 MHz Mag Ang 40 0.616 -23.3 50 0.595 -27.0 100 0.513 -43.4 150 0.470 -57.7 200 0.436 -71.1 250 0.402 -82.2 300 0.382 -95.0 350 0.343 -103.3 400 0.302 -109.7 450 0.279 -114.8 500 0.271 -114.0 550 0.280 -116.1 600 0.306 -119.8 650 0 ...
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... TSH690 DESCRIPTION The TSH690 transistor stages amplifier run- ning within the 40MHz-1GHz frequency band fea- turing a gain of 28dB at 433MHz. The TSH690 is 50 input/output internally matched from 300MHz to 1000MHz. The open collector output requires an inductive load for the impedance matching and also to reach an output power of +13,5dBm at 3V and +18dBm at 4V ...
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... TSH690 DETERMINING VBIAS AND R1 AT 450 MHz Using the 450 MHz curves, you can easily deter- mine V voltage and R1 to obtain the desired BIAS power gain S21. For a given gain S and a given supply voltage you can determine the corresponding CC V .using the curve ’Gain vs V BIAS MHz operation’ ...
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... Freq (MHz) OUTPUT RETURN LOSS 0 -5 -10 -15 -20 -25 100 GAIN vs VBIAS VOLTAGE -10 0.5 800 900 1000 TSH690 Vcc=Vbias @ Ta=+25°C L2=56nH (450MHz operation) 200 300 400 500 600 700 800 900 1000 Freq (MHz ...
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... TSH690 900 MHz operation ( nH) GAIN vs FREQUENCY =10nH (900MHz Operation) Vcc=Vbias=3V 10 100 200 300 400 500 600 700 Freq (MHz) INPUT RETURN LOSS -10 3V -15 -20 Vcc=Vbias @ Ta=+25°C L2 =10nH (900MHz operation) -25 100 200 300 400 500 600 700 Freq (MHz) ...
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... Other curves REVERSE ISOLATION vs FREQUENCY SUPPLY CURRENT vs BIAS VOLTAGE Vcc=3V, Ta=+25° 0,5 1 1,5 2 Vbias (V) TSH690 6 Icc total 4 I bias 2 Pin = -40dBm 0 2,5 3 11/14 ...
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... Modulation is insured by applying the modulating signal onto the bias pin of TSH690 to get an ampli- tude modulation. Figure 7 : Saw transmitter schematic Oscillator Considerations The oscillator frequency is given by the SAW res- onator which is connected between pins 5 & ...
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... L2 with a parallel tank circuit (LC) of 10nH, 13pF. In such a condition, fundamental output level is slightly degraded of less than 0.5dB keeping a good 50 impedance matching. Figure 9 : PCB solder side (not to scale) Figure 10 : Silk screen (not to scale) epoxy substrate TSH690 13/14 ...
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... TSH690 PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dim. Min 0 0.65 b 0.35 b1 0. 4 3 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use ...