UMZ1N ON Semiconductor, UMZ1N Datasheet

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UMZ1N

Manufacturer Part Number
UMZ1N
Description
Complementary Dual General Purpose Transistors
Manufacturer
ON Semiconductor
Datasheet

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UMZ1NT1
Complementary Dual
General Purpose
Amplifier Transistor
PNP and NPN Surface Mount
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ Minimum Pad
2. FR−4 @ 1.0 x 1.0 inch Pad
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 5
THERMAL CHARACTERISTICS
Collector−Base Voltage
Collector−Emitter Voltage
Emitter−Base Voltage
Collector Current − Continuous
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Total Device Dissipation
T
Derate above 25°C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Lead
Junction and Storage Temperature
A
A
ESD Rating
High Voltage and High Current: V
High h
Moisture Sensitivity Level: 1
ESD Rating − Human Body Model: 3A
Pb−Free Package is Available
= 25°C
= 25°C
(Both Junctions Heated)
(One Junction Heated)
FE
: h
Characteristic
Characteristic
FE
Rating
− Machine Model: C
= 200X400
(T
A
= 25°C)
CEO
V
V
V
Symbol
Symbol
Symbol
T
(BR)CBO
(BR)CEO
(BR)EBO
R
R
R
J
P
P
, T
= 50 V, I
I
qJA
qJA
qJL
C
D
D
stg
187 (Note 1)
256 (Note 2)
670 (Note 1)
490 (Note 2)
250 (Note 1)
385 (Note 2)
493 (Note 1)
325 (Note 2)
188 (Note 1)
208 (Note 2)
−55 to +150
1.5 (Note 1)
2.0 (Note 2)
2.0 (Note 1)
3.0 (Note 2)
C
Value
= 200 mA
Max
Max
200
7.0
60
50
mW/°C
mW/°C
mAdc
°C/W
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
°C
*The “T1” suffix refers to a 7 inch reel.
†For information on tape and reel specifications,
UMZ1NT1
UMZ1NT1G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Device*
(Note: Microdot may be in either location)
Q
ORDERING INFORMATION
(6)
(1)
1
MARKING DIAGRAM
3Z = Device Code
M = Date Code
G
http://onsemi.com
(Pb−Free)
= Pb−Free Package
1
Package
SC−88
SC−88
CASE 419B
SC−88
3Z M G
(2)
1
Publication Order Number:
G
(5)
3000 / Tape & Reel
3000 / Tape & Reel
Shipping
(4)
(3)
UMZ1NT1/D
Q
2

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UMZ1N Summary of contents

Page 1

... SC−88 3000 / Tape & Reel (Pb−Free) *The “T1” suffix refers inch reel. †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: UMZ1NT1/D 2 † ...

Page 2

... Current Gain (Note 6.0 Vdc 2.0 mAdc Collector−Emitter Saturation Voltage (I = 100 mAdc mAdc Transistor Frequency UMZ1NT1 (T = 25°C unless otherwise noted 25°C unless otherwise noted) A http://onsemi.com 2 Symbol Min Typ Max V 50 − − ...

Page 3

... CE 10 −1 −10 −100 I , COLLECTOR CURRENT (mA) C Figure 3. DC Current Gain −10 −1 −0.1 −1 −10 −100 I , COLLECTOR CURRENT (mA) C Figure 5. V versus I BE(sat) UMZ1NT1 1000 −1.0 mA −0.5 mA 100 I = −0 25° −1 −4 −5 −6 −1 −1 I ...

Page 4

... A 25°C −25°C 100 COLLECTOR CURRENT (mA) C Figure 9. DC Current Gain COLLECTOR CURRENT (mA) C Figure 11. V versus I BE(sat) UMZ1NT1 1000 2 100°C A 25°C −25°C 1.0 mA 100 0 0 ...

Page 5

... BSC 0.026 BSC 0.10 0.20 0.30 0.004 0.008 0.012 2.00 2.10 2.20 0.078 0.082 0.086 0.65 0.025 0.65 0.025 mm ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative UMZ1NT1/D ...

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