VN2222L Vishay Semiconductors, VN2222L Datasheet
VN2222L
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VN2222L Summary of contents
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... J a Pulsed Drain Current Power Dissipation Thermal Resistance, Junction-to-Ambient Operating Junction and Storage Temperature Range Notes a. Pulse width limited by maximum junction temperature. Document Number: 70213 S-04279—Rev. F, 16-Jul-01 VN0610L, VN10KLS, VN2222L r Max (W) V (V) DS(on) GS(th 0 0 ...
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... VN0610L, VN10KLS, VN2222L Vishay Siliconix SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED) A Parameter Symbol Static Drain-Source Breakdown Voltage V Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current b On-State Drain Current b Drain-Source On-Resistance b Forward Transconductance b Common Source Output Conductance Dynamic Input Capacitance Output Capacitance ...
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... V – Gate-Source Voltage (V) GS On-Resistance vs. Drain Current 0.2 0.4 0.6 I – Drain Current (A) D Document Number: 70213 S-04279—Rev. F, 16-Jul-01 VN0610L, VN10KLS, VN2222L = 25_C UNLESS OTHERWISE NOTED) A 1.0 0.8 0.6 0.4 0.2 1.6 2.0 25_C 125_C 4 5 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.8 1.0 Vishay Siliconix Output Characteristics for Low Gate Drive ...
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... VN0610L, VN10KLS, VN2222L Vishay Siliconix TYPICAL CHARACTERISTICS (T Threshold Region 150_C J 100_C 25_C 0.1 0.01 0 0.25 0.5 0.75 1.0 V – Gate-to-Source Voltage (V) GS Gate Charge 10.0 7.5 5.0 2 100 200 300 Q – Total Gate Charge (pC) g Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Duty Cycle = 0 ...