VND670 STMicroelectronics, VND670 Datasheet
VND670
Available stocks
Related parts for VND670
VND670 Summary of contents
Page 1
... CURRENT LIMITATION VERY LOW STAND-BY POWER CONSUMPTION PWM OPERATION KHz PROTECTION AGAINST: LOSS OF GROUND AND LOSS OF V REVERSE BATTERY PROTECTION (*) DESCRIPTION The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge BLOCK DIAGRAM ...
Page 2
... VND670SP ABSOLUTE MAXIMUM RATING Symbol V Supply voltage CC I Maximum output current (continuous) max1 I Maximum output current (250 ms pulse duration) max2 I Reverse output current (continuous Input current IN I Enable pin current EN I PWM pin current pw I Output gate current gs V Electrostatic discharge (R=1.5k , C=100pF) ...
Page 3
... OFF state I =- =1.1 ) Test Conditions Input rise time < (see fig. 1) C1=4.7nF Break to ground configuration (see fig. 2) (see fig. 3) Test Conditions =12A, L=6mH LOAD VND670SP Value (MAX) 1.4 (MAX) 50 <150 C; unless otherwise specified) ° j Min Typ Max 5 ...
Page 4
... VND670SP ELECTRICAL CHARACTERISTICS (continued) PWM Symbol Parameter PWM low level V pwl voltage I PWM pin current pwl PWM high level V pwh voltage I PWM pin current pwh V PWM hysteresis voltage pwhhyst V PWM clamp voltage pwcl V Test mode PWM pin voltage pwtest I Test mode PWM pin current V ...
Page 5
... L L and GATE outputs. When PWM rises back to “1”, GATE VND670SP GND OUT A R (*) gnd UP M DOWN : R =10 Ohms. CC gnd VND670SP GATE GATE Comment Brake Clockwise H L Counter Brake to GND L L Stand ...
Page 6
... PWM GATE A 27 (*) Reverse battery protection: - series relay in V line Ohms CC gnd - series fuse in V line with antiparallel diode between ground and VND670SP OUT OUT A R (*) gnd DOWN External External Power Mos B Power Mos =10 Ohms. CC ...
Page 7
... OPEN 0 OPEN 0 OPEN 1 OPEN 1 OPEN Protection Action or IN inputs allow to turn-on the High Side respectively, in order A B voltage. The check of the voltage on the other side of the load allow to verify the CC VND670SP ). OUT GATE GATE OPEN OPEN ...
Page 8
... VND670SP ELECTRICAL TRANSIENT REQUIREMENTS ISO T/R Test Level 7637/1 I Test Pulse 1 -25V 2 +25V 3a -25V 3b +25V 4 -4V 5 +26.5V ISO T/R Test Levels Result 7637/1 I Test Pulse Class C All functions of the device are performed as designed after exposure to disturbance. One or more functions of the device are not performed as designed after exposure to disturbance E and cannot be returned to proper operation without replacing the device ...
Page 9
... Figure 2: Test conditions for external Power MOSFET switching times measurement. V gsA dong Figure 3: Definition of the external Power MOSFET turn-on dead time OUT A V gsA 90% 80 d(off 90% 80 doffg rg t del VND670SP (dV /dt) OUT off del 9/ ...
Page 10
... VND670SP Waveforms NORMAL OPERATION ( DIAG / DIAG / PWM OUT A OUT B GATE A GATE B NORMAL OPERATION ( DIAG / DIAG / PWM OUT A OUT B GATE A GATE B CURRENT LIMITATION/THERMAL SHUTDOWN or OUT LIM I OUTA T j DIAG / DIAG / ...
Page 11
... PWM (test mode) OUT A OUT B GATE A GATE B DIAG / DIAG / load connected shorted to V and undervoltage shutdown CC OUT shorted to V normal operation A CC Load disconnection test (IN =1, PWM=-2V) A load disconnected VND670SP undervoltage shutdown load connected back 11/ ...
Page 12
... VND670SP PowerSO-10™ MECHANICAL DATA DIM. MIN. A 3.35 A (*) 3.4 A1 0.00 B 0.40 B (*) 0.37 C 0.35 C (*) 0.23 D 9.40 D1 7.40 E 9.30 E2 7.20 E2 (*) 7.30 E4 5.90 E4 (*) 5. 1.25 F (*) 1.20 H 13.80 H (*) 13. 1.20 L (*) 0.80 0º (*) 2º (*) Muar only POA P013P 0. 12/14 1 mm. TYP MAX. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 1.27 1.35 1.40 14.40 14.35 0.50 1.80 1.10 8º 8º SEATING PLANE DETAIL "A" ...
Page 13
... C A 0.67 - 0.73 0.54 - 0.6 All dimensions are in mm. 1.27 Base Q.ty Bulk Q.ty Tube length (± 0.5) A Casablanca 50 Muar 1.5 1.5 11.5 6.5 2 End Top No components cover 500mm min tape VND670SP CASABLANCA MUAR (± 0.1) 1000 532 10.4 16.4 1000 532 4.9 17.2 REEL DIMENSIONS Base Q.ty 600 Bulk Q.ty 600 A (max) 330 B (min) 1.5 C (± -0) 24 ...
Page 14
... VND670SP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...