VP0106 Supertex, Inc., VP0106 Datasheet

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VP0106

Manufacturer Part Number
VP0106
Description
P-channel Enhancement-mode Vertical Dmos Fets
Manufacturer
Supertex, Inc.
Datasheet
1.VP0106.pdf (5 pages)

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Features
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-G indicates package is RoHS compliant (‘Green’)
Absolute Maximum Ratings
Absolute Maximum Ratings are those values beyond which damage to
the device may occur. Functional operation under these conditions is not
implied. Continuous operation of the device at the absolute rating level
may affect device reliability. All voltages are referenced to device ground.
* Distance of 1.6mm from case for 10 seconds.
Ordering Information
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage temperature
Soldering temperature*
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low C
High input impedance and high gain
Excellent thermal stability
Integral source-to-drain diode
High input impedance and high gain
Complementary N- and P-channel devices
Motor controls
Converters
Amplifi ers
Switches
Power supply circuits
Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)
VP0106
Device
ISS
and fast switching speeds
Package Options
VP0106N3-G
P-Channel Enhancement-Mode
Vertical DMOS FETs
TO-92
-55°C to +150°C
+300°C
Value
BV
BV
±20V
DGS
DSS
General Description
The Supertex VP0106 is an enhancement-mode (normally-
off) transistor that utilizes a vertical DMOS structure
and Supertex’s well-proven silicon-gate manufacturing
process. This combination produces a device with the
power handling capabilities of bipolar transistors, and the
high input impedance and positive temperature coeffi cient
inherent in MOS devices. Characteristic of all MOS
structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
very low threshold voltage, high breakdown voltage, high
input impedance, low input capacitance, and fast switching
speeds are desired.
Pin Confi guration
Product Marking
BV
DSS
-60
(V)
/BV
Y Y W W
DGS
0106
VP
YY = Year Sealed
WW = Week Sealed
DRAIN
TO-92 (N3)
TO-92 (N3)
R
(max)
SOURCE
DS(ON)
8.0
(Ω)
= “Green” Packaging
GATE
VP0106
I
(min)
-500
(mA)
D(ON)

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VP0106 Summary of contents

Page 1

... Distance of 1.6mm from case for 10 seconds. P-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VP0106 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coeffi ...

Page 2

... -10V -500mA mmho V = -25V -500mA 0V -25V 1.0MHz 8.0 6 -25V -500mA 25Ω GEN -1. 0V -1. GEN D.U.T. Output INPUT VP0106 I DRM (mA) -800 = -25V = -25V ...

Page 3

... Typical Performance Curves 3 VP0106 ...

Page 4

... Typical Performance Curves (cont.) 4 VP0106 ...

Page 5

... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing (s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP0106 A020408 ...

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