VP0808 Supertex, Inc., VP0808 Datasheet

VP0808

Manufacturer Part Number

VP0808

Description

P-channel Enhancement-mode Vertical Dmos Fets

Manufacturer

Supertex, Inc.

Datasheet

1.VP0808.pdf (3 pages)

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Part Number

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Quantity

Price

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Part Number:

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Part Number:

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Part Number:

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Features

►

Applications

►

-G indicates package is RoHS compliant (‘Green’)

Absolute Maximum Ratings

Absolute Maximum Ratings are those values beyond which damage to

the device may occur. Functional operation under these conditions is not

implied. Continuous operation of the device at the absolute rating level

may affect device reliability. All voltages are referenced to device ground.

* Distance of 1.6mm from case for 10 seconds.

Ordering Information

Parameter

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Low C

High input impedance and high gain

Excellent thermal stability

Integral source-to-drain diode

High input impedance and high gain

Complementary N- and P-channel devices

Motor controls

Converters

Ampliﬁ ers

Switches

Power supply circuits

Drivers (relays, hammers, solenoids, lamps,

memories, displays, bipolar transistors, etc.)

VP0808

Device

ISS

and fast switching speeds

Package Option

P-Channel Enhancement-Mode

Vertical DMOS FETs

VP0808L-G

TO-92

-55°C to +150°C

+300°C

Value

±30V

DGS

DSS

General Description

The Supertex VP0808 is an enhancement-mode (normally-

off) transistor that utilizes a vertical DMOS structure

and Supertex’s well-proven silicon-gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors, and the

high input impedance and positive temperature coefﬁ cient

inherent in MOS devices. Characteristic of all MOS

structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

very low threshold voltage, high breakdown voltage, high

input impedance, low input capacitance, and fast switching

speeds are desired.

Pin Conﬁ guration

Product Marking

DSS

-80

(V)

/BV

Y Y W W

DGS

0808

YY = Year Sealed

WW = Week Sealed

DRAIN

TO-92 (L)

(max)

SOURCE

5.0

DS(ON)

(Ω)

= “Green” Packaging

GATE

VP0808

(min)

-1.1

D(ON)

(A)

Related parts for VP0808

VP0808 Summary of contents

Page 1

... Distance of 1.6mm from case for 10 seconds. P-Channel Enhancement-Mode Vertical DMOS FETs General Description The Supertex VP0808 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefﬁ ...

Page 2

... V = -10V mmho V = -10V 150 -25V 1.0MHz - -25V -500mA 25Ω GEN - 0V GEN D.U.T. Output INPUT VP0808 I DRM (mA) -3.0 = -1.0mA = Max Rating -15V DS = -1.0A = -500mA = -900mA ...

Page 3

... Dimension NOM - (inches) MAX .210 Drawings not to scale. (The package drawing (s) in this data sheet may not reﬂ ect the most current speciﬁ cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP0808 A113007 ...

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