ZXMN6A11G Diodes Inc, ZXMN6A11G Datasheet

MOSFET, N CH, 60V, 4.4A, SOT-223

ZXMN6A11G

Manufacturer Part Number
ZXMN6A11G
Description
MOSFET, N CH, 60V, 4.4A, SOT-223
Manufacturer
Diodes Inc
Datasheet

Specifications of ZXMN6A11G

Transistor Polarity
N Channel
Continuous Drain Current Id
4.4A
Drain Source Voltage Vds
60V
On Resistance Rds(on)
140mohm
Rds(on) Test Voltage Vgs
10V
Power Dissipation Pd
3.9W
No. Of Pins
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ZXMN6A11GTA
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
Company:
Part Number:
ZXMN6A11GTA
Quantity:
264
Part Number:
ZXMN6A11GTC
Manufacturer:
ZETEX/DIODES
Quantity:
20 000
60V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilises a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
ORDERING INFORMATION
DEVICE MARKING
ISSUE 3 - NOVEMBER 2004
DEVICE
ZXMN6A11GTA
ZXMN6A11GTC
(BR)DSS
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT223 package
DC - DC converters
Power management functions
Relay and solenoid driving
Motor control
ZXMN
6A11
= 60V; R
DS(ON)
REEL
SIZE
13”
7”
= 0.14
WIDTH
12mm
12mm
TAPE
I
D
= 3.8A
QUANTITY
1000 units
4000 units
PER REEL
1
ZXMN6A11G
TOP VIEW
SOT223

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ZXMN6A11G Summary of contents

Page 1

... Relay and solenoid driving • Motor control ORDERING INFORMATION DEVICE REEL TAPE SIZE WIDTH ZXMN6A11GTA 7” 12mm ZXMN6A11GTC 13” 12mm DEVICE MARKING • ZXMN 6A11 ISSUE 3 - NOVEMBER 2004 I = 3.8A D QUANTITY PER REEL 1000 units 4000 units 1 ZXMN6A11G SOT223 TOP VIEW ...

Page 2

... ZXMN6A11G ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current V =10V =10V =10V (c) Pulsed Drain Current Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (a) Power Dissipation at T =25°C A Linear Derating Factor (b) Power Dissipation at T =25°C A Linear Derating Factor ...

Page 3

... ISSUE 3 - NOVEMBER 2004 CHARACTERISTICS 3 ZXMN6A11G ...

Page 4

... ZXMN6A11G ELECTRICAL CHARACTERISTICS ( 25°C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State (1) Resistance (3) Forward Transconductance (3) DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance (2) (3) SWITCHING Turn-On Delay Time ...

Page 5

... ISSUE 3 - NOVEMBER 2004 TYPICAL CHARACTERISTICS 5 ZXMN6A11G ...

Page 6

... ZXMN6A11G TYPICAL CHARACTERISTICS 6 ISSUE 3 - NOVEMBER 2004 ...

Page 7

... Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com 7 ZXMN6A11G 4.6 2.0 min (3x) 2.3 1.5 min (3x) 2.0 min 3.8 min Corporate Headquarters Zetex Semiconductors plc ...

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