string(2) "55" NXP Semiconductors - Special Offers On Request - page 5

NXP Semiconductors - Special Offers On Request - page 5

Showing 201-250 of 1684 items
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Part Number
Description
Manufacturer
SeriesS
DatasheetD
RequestR
BT258S-800LT
Part Number:
BT258S-800LT
Description:
Passivated sensitive gate silicon-controlled rectifier (scr) in a sot428 surface-mounted plastic package
Manufacturer:
NXP Semiconductors
BT258S-800R
Part Number:
BT258S-800R
Description:
Passivated, sensitive gate thyristor in a plastic envelope, suitable for surface mounting, intended for use in general purpose switching and phase control applications
Manufacturer:
NXP Semiconductors
BT300S-600R
Part Number:
BT300S-600R
Description:
Passivated thyristors in a plastic envelope, suitable for surface mounting, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance
Manufacturer:
NXP Semiconductors
BTH151S-650R
Part Number:
BTH151S-650R
Description:
Planar passivated silicon controlled rectifier (scr) in a sot428 (dpak) surface mountable plastic package intended for use in applications requiring high bidirectional blocking voltage, high repetitive surge current capability and high thermal cyclin
Manufacturer:
NXP Semiconductors
EC103D1
Part Number:
EC103D1
Description:
Planar passivated ultra sensitive gate silicon controlled rectifier in a sot54 (t0-92) plastic package
Manufacturer:
NXP Semiconductors
Datasheet:
MCR08BT1
Part Number:
MCR08BT1
Description:
Passivated, sensitive gate thyristor in a sot223 plastic package
Manufacturer:
NXP Semiconductors
Datasheet:
N0118GA
Part Number:
N0118GA
Description:
Planar passivated ultra sensitive gate silicon controlled rectifier in a sot54 (t0-92) plastic package
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
BGD712C
Description:
Hybrid high dynamic range amplifier module operating at a supply voltage of 24 v (dc)
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
BGE788C
Description:
Hybrid high dynamic range amplifier module operating at a supply voltage of 24 v (dc)
Manufacturer:
NXP Semiconductors
Datasheet:
BGO807C
Part Number:
BGO807C
Description:
High dynamic range optical receiver amplifier module in a standard sot115 package where the non-jacketed fiber has either no connector or has an fc/apc or sc/apc connector
Manufacturer:
NXP Semiconductors
BGO807CE
Part Number:
BGO807CE
Description:
High dynamic range optical receiver amplifier module in a standard sot115 package where the non-jacketed fiber has either no connector or has an fc/apc or sc/apc connector
Manufacturer:
NXP Semiconductors
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Part Number:
BGR269
Description:
High performance amplifier in a sot115j package, operating at a voltage supply of 24 v (dc)
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
BGY66B
Description:
Hybrid high dynamic range amplifier module designed for applications in catv systems with a bandwidth of 5 mhz to 120 mhz operating with a voltage supply of 24 v (dc)
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
BGY835C
Description:
Hybrid high dynamic range amplifier module operating at a supply voltage of 24 v (dc) in a sot115j package
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGD1040HI
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 vdc
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGD1042H
Description:
Hybrid amplifier module operating at a supply voltage of 24 v (dc), employing hetero junction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGD1042HI
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v (dc), employing hetero junction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGD1044HI
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v (dc), employing hetero junction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGD1046HI
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v (dc), employing hetero junction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGD982HCI
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v (dc), employing hetero junction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGD985HCI
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v (dc), employing hetero junction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
no image
Part Number:
CGD987HCI
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v (dc), employing hetero junction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGY1032
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v direct current (dc), employing heterojunction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGY1041
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v direct current (dc), employing heterojunction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGY1043
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v direct current (dc), employing heterojunction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
no image
Part Number:
CGY1047
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v direct current (dc), employing heterojunction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
no image
Part Number:
CGY1049
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v direct current (dc), employing heterojunction field effect transistor (hfet) gaas dies
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
CGY888C
Description:
Hybrid amplifier module in a sot115j package, operating at a supply voltage of 24 v direct current (dc), employing hetero junction field effect transistor (hfet) gaas mmic
Manufacturer:
NXP Semiconductors
Datasheet:
SA58631
Part Number:
SA58631
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
SA58632
Part Number:
SA58632
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
SA58635
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
SA58637
Part Number:
SA58637
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
SA58670A
Part Number:
SA58670A
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
SA58670
Part Number:
SA58670
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
SA58672
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
no image
Part Number:
TDA1308
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
TDA1517ATW
Part Number:
TDA1517ATW
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
TDA1519C
Description:
Manufacturer:
NXP Semiconductors
Datasheet:
TDA1566
Part Number:
TDA1566
Description:
The tda1566 is a car audio power amplifier with a complementary output stage realizedin bcdmos
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
TDA7052A_AT
Description:
The tda7052a/at are mono btl output amplifiers with dc volume control
Manufacturer:
NXP Semiconductors
TDA7056A
Part Number:
TDA7056A
Description:
The tda7056a is a mono btl output amplifier with dc volume control
Manufacturer:
NXP Semiconductors
Datasheet:
TDA7056AT
Part Number:
TDA7056AT
Description:
The tda7056at is a mono bridge-tied load (btl) output amplifier with dc volume control
Manufacturer:
NXP Semiconductors
Datasheet:
TDA8551_T
Part Number:
TDA8551_T
Description:
The tda8551; tda8551t is a one channel 1 wbridge-tied load (btl) audio power amplifier capable ofdelivering 1 w output power to an 8 Ω load at thd = 10%using a 5 v power supply
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
TDA8552T_TS
Description:
The tda8552t is a two channel audio power amplifier thatprovides an output power of 2 x 1
Manufacturer:
NXP Semiconductors
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Part Number:
TDA8566
Description:
The tda8566 is an integrated class-b output amplifier which is available in severalpackages
Manufacturer:
NXP Semiconductors
Datasheet:
TDA8567Q
Part Number:
TDA8567Q
Description:
The tda8567q is an integrated class-b output amplifier ina 23-lead single-in-line (sil) plastic power package
Manufacturer:
NXP Semiconductors
Datasheet:
TDA8571J
Part Number:
TDA8571J
Description:
The tda8571j is a integrated class-b output amplifiercontained in a 23-lead single-in-line (sil) plastic powerpackage
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
TDA8588_X
Description:
Amplifiers the tda8588 has a complementary quad audio power amplifier that uses bcdmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
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Part Number:
TDA8594
Description:
The tda8594 is a complementary quad bridge tied load (btl) audio power amplifiermade in bcdmos technology
Manufacturer:
NXP Semiconductors
Datasheet:
no image
Part Number:
TDA8595
Description:
The tda8595 is a complementary quad bridge tied load (btl) audio power amplifiermade in bcdmos technology
Manufacturer:
NXP Semiconductors
Datasheet: