RF FETs - Datasheets - page 3

Showing 101-150 of 687 items

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Part Number

Description

Manufacturer

SeriesS

DatasheetD

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Part Number:

NE3104-VC11A

Description:

For photo color printers 310dpi;dots/inch

Manufacturer:

ROHM Co. Ltd.

Datasheet:

NE3104-VC11A.pdf

Part Number:

SHF1304

Description:

Hyper fast recovery rectifier 200-600 volts

Manufacturer:

Solid State Devices, Inc.

Datasheet:

SHF1304.pdf

Part Number:

SHF1403

Description:

4 amps, 200-600 volts 30 nsec hyper fast rectifier

Manufacturer:

Solid State Devices, Inc.

Datasheet:

SHF1403.pdf

Part Number:

SHF1302

Description:

Hyper fast recovery rectifier 200-600 volts

Manufacturer:

Solid State Devices, Inc.

Datasheet:

SHF1302.pdf

Part Number:

SHF-0589

Description:

0.05-3 ghz, 2 watt gaas hfet

Manufacturer:

Sirenza Microdevices

Datasheet:

SHF-0589.pdf

Part Number:

SHF-0186

Description:

Dc-12 ghz, 0.5 watt algaas/gaas hfet

Manufacturer:

Sirenza Microdevices

Datasheet:

SHF-0186.pdf

Part Number:

SHF-015-S111-95-T0

Description:

Sh series - high density d-sub s111 standard soldertail type

Manufacturer:

E-tec Interconnect

Datasheet:

SHF-015-S111-95-T0.pdf

Part Number:

SHF6156-2

Description:

Transistor optically coupled isolator

Manufacturer:

Isocom Ltd

Datasheet:

SHF6156-2.pdf

Part Number:

NE5814M14

Description:

P-channel low noise mos field effect transistor for impedance converter of microphone 4-pin lead-less minimold m14, 1208 pkg

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE5814M14.pdf

Part Number:

NE5500479A

Description:

3.5 v operation silicon rf power ldmos fet for 900 mhz 1 w transmission amplifiers

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE5500479A.pdf

Part Number:

NE5500134

Description:

N-channel silicon power mos fet power amplifier for 0.8 to 2.0 ghz cellular handsets

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE5500134.pdf

Part Number:

NE52118

Description:

L to s band low noise amplifier npn gaas hbt

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE52118.pdf

Part Number:

NE5510179A

Description:

3.5v operation silicon rf power mosfet for 1.9 ghz transmission amplifiers

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE5510179A.pdf

Part Number:

NE5531079A

Description:

7.5 v operation silicon rf power ldmos fet for uhf-band 10 w transmission amplifiers

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE5531079A.pdf

Part Number:

BLF1822-10

Description:

Uhf power ldmos transistor

Manufacturer:

NXP Semiconductors

Datasheet:

BLF1822-10.pdf

Part Number:

BLF2022-120

Description:

Uhf push-pull power ldmos transistor

Manufacturer:

NXP Semiconductors

Datasheet:

BLF2022-120.pdf

Part Number:

CGH31240F

Description:

240 w, 2700-3100 mhz, gan hemt for s-band radar systems

Manufacturer:

Cree, Inc.

Datasheet:

CGH31240F.pdf

Part Number:

CGH27015

Description:

15 w, 2300-2900 mhz, 28v, gan hemt for wimax

Manufacturer:

Cree, Inc.

Datasheet:

CGH27015.pdf

Part Number:

CGH35030F

Description:

30 w, 3300-3900 mhz, 28v, gan hemt for wimax

Manufacturer:

Cree, Inc.

Datasheet:

CGH35030F.pdf

Part Number:

CGH55015F

Description:

5 w, 5500-5800 mhz, gan hemt for wimax

Manufacturer:

Cree, Inc.

Datasheet:

CGH55015F.pdf

Part Number:

CGH40010

Description:

0 w, rf power gan hemt

Manufacturer:

Cree, Inc.

Datasheet:

CGH40010.pdf

Part Number:

CGH40025

Description:

25 w, rf power gan hemt

Manufacturer:

Cree, Inc.

Datasheet:

CGH40025.pdf

Part Number:

CGH40045

Description:

45 w, rf power gan hemt

Manufacturer:

Cree, Inc.

Datasheet:

CGH40045.pdf

Part Number:

CGH350-5F

Description:

15 w, 3300-3900 mhz, 28v, gan hemt for wimax

Manufacturer:

Cree, Inc.

Datasheet:

CGH350-5F.pdf

Part Number:

CGH09120F

Description:

120 w, uhf - 2.5 ghz, gan hemt for wcdma, lte, mc-gsm

Manufacturer:

Cree, Inc.

Datasheet:

CGH09120F.pdf

Part Number:

CGH21240F

Description:

240 w, 1800-2300 mhz, gan hemt for wcdma, lte, wimax

Manufacturer:

Cree, Inc.

Datasheet:

CGH21240F.pdf

Part Number:

CGH55015F1

Description:

15 w, 5500-5800 mhz, gan hemt for wimax

Manufacturer:

Cree, Inc.

Datasheet:

CGH55015F1.pdf

Part Number:

CGH55030F2

Description:

25 w, c-band, unmatched, gan hemt

Manufacturer:

Cree, Inc.

Datasheet:

CGH55030F2.pdf

Part Number:

CGH21120F

Description:

120 w, 1800-2300 mhz, gan hemt for wcdma, lte, wimax

Manufacturer:

Cree, Inc.

Datasheet:

CGH21120F.pdf

Part Number:

PD8042

Description:

Ingaas avalanche photo diodes

Manufacturer:

Mitsumi Electronics, Corp.

Datasheet:

PD8042.pdf

Part Number:

PD21120R6

Description:

120 watts, 2110-2170 mhz push/pull lateral mosfet

Manufacturer:

TriQuint Semiconductor

Part Number:

3SK0304

Description:

Silicon n-channel mos fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0304.pdf

Part Number:

3SK0305

Description:

Silicon n-channel mos fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0305.pdf

Part Number:

3SK0219

Description:

Silicon n-channel 4-pin mos fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0219.pdf

Part Number:

3SK0241

Description:

Gaas n-channel mes fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0241.pdf

Part Number:

3SK0268

Description:

Gaas n-channel mes fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0268.pdf

Part Number:

3SK0271

Description:

Silicon n-channel 4-pin mos fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0271.pdf

Part Number:

3SK0272

Description:

Silicon n-channel 4-pin mos fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0272.pdf

Part Number:

3SK0285

Description:

Silicon n-channel mos fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0285.pdf

Part Number:

3SK0286

Description:

Silicon n-channel mos fet

Manufacturer:

Panasonic Corporation of North America

Datasheet:

3SK0286.pdf

Part Number:

3SK317

Description:

Mosfets silicon n-channel dual gate mos fet uhf / vhf rf amplifier

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

3SK317.pdf

Part Number:

3SK324

Description:

Mosfets si nch dual gate mos fet uhf rf low noise amplifier

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

3SK324.pdf

Part Number:

ON56G5E-R52

Description:

Carbon film resistors, 5% tolerance available in e24 ohmic values

Manufacturer:

Ohmite Mfg. Co.

Datasheet:

ON56G5E-R52.pdf

Part Number:

NE661M05

Description:

Npn silicon rf transistor

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE661M05.pdf

Part Number:

NE650R479A

Description:

0.4 w l, s-band power gaas mes fet

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE650R479A.pdf

Part Number:

NE6510379A

Description:

3 w l-band power gaas hj-fet

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE6510379A.pdf

Part Number:

NE698M01

Description:

Npn epitaxial silicon transistor for microwave hifh-gain amplification

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE698M01.pdf

Part Number:

NE699M01

Description:

Npn epitaxial silicon transistor for microwave high-gain amplification

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE699M01.pdf

Part Number:

NE681M23

Description:

Npn silicon transistor

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE681M23.pdf

Part Number:

NE680M03

Description:

Npn silicon transistor

Manufacturer:

Renesas Electronics Corporation.

Datasheet:

NE680M03.pdf

RF FETs - Datasheets - page 3

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