PESD3V3S4UF,115 NXP Semiconductors, PESD3V3S4UF,115 Datasheet - Page 11
![DIODE QUAD ESD PROTECTION 6-XSON](/photos/1/39/13915/6-xson_sot886_pkg_sml.jpg)
PESD3V3S4UF,115
Manufacturer Part Number
PESD3V3S4UF,115
Description
DIODE QUAD ESD PROTECTION 6-XSON
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PESD3V3S4UF115.pdf
(13 pages)
Specifications of PESD3V3S4UF,115
Package / Case
6-XSON (Micropak™), SOT-886
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.32V
Power (watts)
110W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Channels
4 Channels
Clamping Voltage
11 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Peak Surge Current
10 A
Peak Pulse Power Dissipation
110 W
Capacitance
110 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.05(Max) mm W x 1.5(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061196115
PESD3V3S4UF T/R
PESD3V3S4UF T/R
PESD3V3S4UF T/R
PESD3V3S4UF T/R
NXP Semiconductors
11. Revision history
Table 10.
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Document ID
PESD3V3S4UF_PESD5V0S4UF_1 20080117
Revision history
Release date
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
Data sheet status
Product data sheet
Unidirectional quadruple ESD protection diode arrays
Change notice
-
Supersedes
-
© NXP B.V. 2008. All rights reserved.
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