PESD3V3S4UF,115 NXP Semiconductors, PESD3V3S4UF,115 Datasheet - Page 7
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PESD3V3S4UF,115
Manufacturer Part Number
PESD3V3S4UF,115
Description
DIODE QUAD ESD PROTECTION 6-XSON
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PESD3V3S4UF115.pdf
(13 pages)
Specifications of PESD3V3S4UF,115
Package / Case
6-XSON (Micropak™), SOT-886
Voltage - Reverse Standoff (typ)
3.3V
Voltage - Breakdown
5.32V
Power (watts)
110W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Channels
4 Channels
Clamping Voltage
11 V
Operating Voltage
3.3 V
Breakdown Voltage
5.6 V
Peak Surge Current
10 A
Peak Pulse Power Dissipation
110 W
Capacitance
110 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.05(Max) mm W x 1.5(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061196115
PESD3V3S4UF T/R
PESD3V3S4UF T/R
PESD3V3S4UF T/R
PESD3V3S4UF T/R
NXP Semiconductors
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Fig 8. ESD clamping test setup and waveforms
GND
GND
unclamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
unclamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
IEC 61000-4-2 network
C
Z
= 150 pF; R
ESD TESTER
C
Z
R
Z
Z
= 330
vertical scale = 100 V/div
horizontal scale = 50 ns/div
vertical scale = 100 V/div
horizontal scale = 50 ns/div
Device
Under
DUT
Test
Rev. 01 — 17 January 2008
PESD3V3S4UF; PESD5V0S4UF
450
Unidirectional quadruple ESD protection diode arrays
RG 223/U
50
GND
coax
clamped +1 kV ESD voltage waveform
(IEC 61000-4-2 network)
clamped 1 kV ESD voltage waveform
(IEC 61000-4-2 network)
ATTENUATOR
PESD5V0S4UF
PESD3V3S4UF
10
(1): attenuator is only used for open
(1)
socket high voltage measurements
vertical scale = 5 V/div
horizontal scale = 50 ns/div
vertical scale = 5 V/div
horizontal scale = 50 ns/div
OSCILLOSCOPE
DIGITIZING
© NXP B.V. 2008. All rights reserved.
50
006aab149
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