PESD5V0S4UF,115 NXP Semiconductors, PESD5V0S4UF,115 Datasheet - Page 9

DIODE QUAD ESD PROTECTION 6-XSON

PESD5V0S4UF,115

Manufacturer Part Number
PESD5V0S4UF,115
Description
DIODE QUAD ESD PROTECTION 6-XSON
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PESD5V0S4UF,115

Package / Case
6-XSON (Micropak™), SOT-886
Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6.46V
Power (watts)
110W
Polarization
4 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Channels
4 Channels
Clamping Voltage
12 V
Operating Voltage
5 V
Breakdown Voltage
6.8 V
Peak Surge Current
10 A
Peak Pulse Power Dissipation
110 W
Capacitance
85 pF
Maximum Operating Temperature
+ 105 C
Minimum Operating Temperature
- 65 C
Dimensions
1.05(Max) mm W x 1.5(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061201115
PESD5V0S4UF T/R
PESD5V0S4UF T/R
NXP Semiconductors
8. Package outline
9. Packing information
PESD3V3S4UF_PESD5V0S4UF_1
Product data sheet
Table 9.
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
[2]
[3]
Type number
PESD3V3S4UF SOT886
PESD5V0S4UF SOT886
Fig 10. Package outline PESDxS4UF (SOT886)
For further information and the availability of packing methods, see
T1: normal taping
T4: 90 rotated reverse taping
Packing methods
Package
Dimensions in mm
Rev. 01 — 17 January 2008
1.5
1.4
PESD3V3S4UF; PESD5V0S4UF
0.5
0.5
Description
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T4
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T4
0.40
0.32
3
2
1
Unidirectional quadruple ESD protection diode arrays
1.05
0.95
0.6
0.35
0.27
5
6
4
0.25
0.17
0.50
max
Section
[1]
04-07-22
0.04
max
13.
[2]
[3]
[2]
[3]
Packing quantity
5000
-115
-132
-115
-132
© NXP B.V. 2008. All rights reserved.
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