1SMB5.0AT3G ON Semiconductor, 1SMB5.0AT3G Datasheet - Page 2

TVS 600W 5.0V UNIDIRECT SMB

1SMB5.0AT3G

Manufacturer Part Number
1SMB5.0AT3G
Description
TVS 600W 5.0V UNIDIRECT SMB
Manufacturer
ON Semiconductor
Datasheet

Specifications of 1SMB5.0AT3G

Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6.4V
Power (watts)
600W
Polarization
Unidirectional
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Number Of Elements
1
Polarity
Uni-Directional
Package Type
SMB
Operating Temperature Classification
Military
Reverse Breakdown Voltage
6.4V
Clamping Voltage
9.2V
Reverse Stand-off Voltage
5V
Leakage Current (max)
800uA
Peak Pulse Current
65.2A
Peak Pulse Power Dissipation
600W
Test Current (it)
10mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
2
Operating Voltage
5 V
Breakdown Voltage
6.7 V
Termination Style
SMD/SMT
Peak Surge Current
65.2 A
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
3.56 mm W x 4.32 mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1SMB5.0AT3GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1SMB5.0AT3G
Manufacturer:
ON
Quantity:
20 000
Part Number:
1SMB5.0AT3G
Manufacturer:
ON/安森美
Quantity:
20 000
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
otherwise noted, V
Peak Power Dissipation (Note 1) @ T
DC Power Dissipation @ T
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
Operating and Storage Temperature Range
Symbol
V
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Derate Above 25°C
non−repetitive duty cycle.
V
I
RWM
V
V
I
PP
I
I
BR
R
T
F
C
F
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Forward Current
Forward Voltage @ I
F
= 3.5 V Max. @ I
L
= 75°C
Parameter
F
PP
A
T
F
A
= 25°C
L
(Note 5) = 30 A)
= 25°C
= 25°C, Pulse Width = 1 ms
Rating
(T
A
= 25°C unless
RWM
http://onsemi.com
2
V
C
V
Symbol
BR
T
R
R
I
J
P
FSM
P
P
, T
qJA
V
qJL
PK
D
D
RWM
stg
Uni−Directional TVS
I
F
−65 to +150
I
I
I
I
R
T
PP
Value
0.55
600
226
100
3.0
4.4
40
25
V
F
mW/°C
mW/°C
°C/W
°C/W
Unit
°C
W
W
W
A
V

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