PIC16F627-04/SO Microchip Technology, PIC16F627-04/SO Datasheet - Page 129

• Manufacturer Part Number: PIC16F627-04/SO
• Description: IC MCU FLASH 1KX14 COMP 18SOIC
• Manufacturer: Microchip Technology
• Series: PIC® 16Fr

Specifications of PIC16F627-04/SO

• Core Size: 8-Bit
• Program Memory Size: 1.75KB (1K x 14)
• Core Processor: PIC
• Speed: 4MHz
• Connectivity: UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 16
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 224 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 18-SOIC (7.5mm Width)
• Controller Family/series: PIC16F
• No. Of I/o's: 16
• Eeprom Memory Size: 128Byte
• Ram Memory Size: 224Byte
• Cpu Speed: 4MHz
• No. Of Timers: 3
• Processor Series: PIC16F
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 224 B
• Interface Type: SCI, USART
• Maximum Clock Frequency: 4 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 3
• Operating Supply Voltage: 3 V to 5.5 V
• Maximum Operating Temperature: + 70 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014, DM164120-4
• Minimum Operating Temperature: 0 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: XLT18SO-1 - SOCKET TRANSITION 18SOIC 300MILAC164010 - MODULE SKT PROMATEII DIP/SOIC
• Data Converters: -
• Lead Free Status / Rohs Status: Details

17.0
Absolute Maximum Ratings†
Ambient temperature under bias................................................................................................................. -40 to +125°C
Storage temperature .............................................................................................................................. -65°C to +150°C
Voltage on V
Voltage on MCLR and RA4 with respect to V
Voltage on all other pins with respect to V
Total power dissipation
Maximum current out of V
Maximum current into V
Input clamp current, I
Output clamp current, I
Maximum output current sunk by any I/O pin..........................................................................................................25 mA
Maximum output current sourced by any I/O pin ....................................................................................................25 mA
Maximum current sunk by PORTA and PORTB....................................................................................................200 mA
Maximum current sourced by PORTA and PORTB ..............................................................................................200 mA
Note 1: Power dissipation is calculated as follows: P
 2003 Microchip Technology Inc.
† NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
Note:
ELECTRICAL SPECIFICATIONS
Voltage spikes below V
a series resistor of 50-100
this pin directly to V
DD
with respect to V
IK
(1)
OK
(V
DD
.....................................................................................................................................800 mW
SS
I
(Vo < 0 or Vo >V
< 0 or V
pin ..............................................................................................................................250 mA
pin ...........................................................................................................................300 mA
SS
SS
SS
I
> V
............................................................................................................ -0.3 to +6.5V
at the MCLR pin, inducing currents greater than 80 mA, may cause latchup. Thus,
Ω
DD
should be used when applying a “low” level to the MCLR pin rather than pulling
SS
)..................................................................................................................... ± 20 mA
DD
SS
....................................................................................-0.3V to V
)............................................................................................................... ± 20 mA
............................................................................................-0.3 to +14V
Preliminary
DIS
= V
DD
x {I
DD
- ∑ I
OH
} + ∑ {(V
DD
-V
PIC16F62X
OH
) x I
OH
DS40300C-page 127
} + ∑(V
O
DD
l x I
+ 0.3V
OL
)