MC908GZ60CFJE Freescale Semiconductor, MC908GZ60CFJE Datasheet - Page 46

• Manufacturer Part Number: MC908GZ60CFJE
• Description: IC MCU 60K FLASH 8MHZ 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HC08r

Specifications of MC908GZ60CFJE

• Core Processor: HC08
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: CAN, SCI, SPI
• Peripherals: LVD, POR, PWM
• Number Of I /o: 21
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Controller Family/series: HC08
• No. Of I/o's: 21
• Ram Memory Size: 2KB
• Cpu Speed: 8MHz
• No. Of Timers: 2
• Embedded Interface Type: CAN, SCI, SPI
• Rohs Compliant: Yes
• Processor Series: HC08GZ
• Core: HC08
• Data Bus Width: 8 bit
• Data Ram Size: 2 KB
• Interface Type: CAN, ESCI, SPI
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 53
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: FSICEBASE, DEMO908GZ60E, M68EML08GZE
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 24 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

Memory
Programming tools are available from Freescale. Contact your local Freescale representative for more
information.
2.6.2 FLASH-1 Control and Block Protect Registers
The FLASH-1 array has two registers that control its operation, the FLASH-1 control register (FL1CR) and
the FLASH-1 block protect register (FL1BPR).
2.6.2.1 FLASH-1 Control Register
The FLASH-1 control register (FL1CR) controls FLASH program and erase operations.
HVEN — High-Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
1. No security feature is absolutely secure. However, Freescale’s strategy is to make reading or copying the FLASH difficult for
46
unauthorized users.
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
Setting this read/write bit configures the FLASH-1 array for mass erase operation.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = MASS erase operation selected
0 = MASS erase operation unselected
1 = Erase operation selected
0 = Erase operation unselected
1 = Program operation selected
0 = Program operation unselected
Address:
A security feature prevents viewing of the FLASH contents.
Reset:
Read:
Write:
MC68HC908GZ60 • MC68HC908GZ48 • MC68HC908GZ32 Data Sheet, Rev. 6
$FF88
Bit 7
0
0
Figure 2-3. FLASH-1 Control Register (FL1CR)
= Unimplemented
6
0
0
5
0
0
NOTE
4
0
0
HVEN
3
0
MASS
2
0
(1)
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0