M30626FJPGP#U3C Renesas Electronics America, M30626FJPGP#U3C Datasheet - Page 287

• Manufacturer Part Number: M30626FJPGP#U3C
• Description: IC M16C MCU FLASH 512K 100LQFP
• Manufacturer: Renesas Electronics America
• Series: M16C™ M16C/60r

Specifications of M30626FJPGP#U3C

• Core Processor: M16C/60
• Core Size: 16-Bit
• Speed: 24MHz
• Connectivity: I²C, IEBus, UART/USART
• Peripherals: DMA, WDT
• Number Of I /o: 85
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• Ram Size: 31K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 26x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 100-LQFP
• For Use With: 867-1000 - KIT QUICK START RENESAS 62PR0K33062PS001BE - R0K33062P STARTER KITR0K33062PS000BE - KIT EVAL STARTER FOR M16C/62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ09B0185-0241
22. Flash Memory Version
Aside from the built-in flash memory, the flash memory version microcomputer has the same functions as the masked
ROM version.
In the flash memory version, the flash memory can perform in three rewrite modes: CPU rewrite mode, standard serial
I/O mode and parallel I/O mode.
Table 22.1 lists specifications of the flash memory version. See Table 1.1 to Table 1.3 Performance outline of
M16C/62PT group for the items not listed in Table 22.1.
Table 22.1
NOTES:
Flash Memory Rewrite Mode
Erase Block
Program Method
Erase Method
Program and Erase Control Method
Protect Method
Number of Commands
Program and Erase Endurance
Data Retention
ROM Code Protection
1. The boot ROM area contains a standard serial I/O mode rewrite control program which is stored in it
2. Can be programmed in byte units in only parallel input/output mode.
3. Block 1 and block A are 10,000 times of programming and erasure. All other blocks are 1,000 times
4. Definition of program and erase endurance
when shipped from the factory. This area can only be rewritten in parallel input/output mode.
of programming and erasure.
The programming and erasure times are defined to be per-block erasure times. For example,
assume a case where a 4-Kbyte block A is programmed in 2,048 operations by writing one word at
a time and erased thereafter.
In this case, the block is reckoned as having been programmed and erased once.
If a product is 100 times of programming and erasure, each block in it can be erased up to 100
times. When 10,000 times of programming and erasure, block 1 and block A can each be erased
up to 10,000 times. All other blocks can each be erased up to 1,000 times.
Jan 10, 2006
Flash Memory Version Specifications
Item
User ROM Area
Boot ROM Area
Page 270 of 390
3 modes (CPU rewrite, standard serial I/O, parallel I/O)
See Figure 22.1 Flash Memory Block Diagram
1 block (4 Kbytes)
In units of word, in units of byte
Collective erase, block erase
Program and erase controlled by software command
The lock bit protects each block
8 commands
10 years
Parallel I/O and standard serial I/O modes are supported
100 times, 1,000 times/10,000 times (option)
(1)
Specification
(2)
22. Flash Memory Version
(3, 4)