M30626FJPFP#U7C Renesas Electronics America, M30626FJPFP#U7C Datasheet - Page 47

IC M16C/62P MCU FLASH 100QFP

M30626FJPFP#U7C

Manufacturer Part Number
M30626FJPFP#U7C
Description
IC M16C/62P MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheets

Specifications of M30626FJPFP#U7C

Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
31K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
For Use With
867-1000 - KIT QUICK START RENESAS 62PR0K33062PS001BE - R0K33062P STARTER KITR0K33062PS000BE - KIT EVAL STARTER FOR M16C/62PM3062PT3-CPE-3 - EMULATOR COMPACT M16C/62P/30P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ03B0001-0241
Table 5.6
Table 5.7
NOTES:
Table 5.8
t
t
PS
PS
Symbol
Symbol
1. Referenced to V
2. n denotes the number of block erases.
3. Program and Erase Endurance refers to the number of times a block erase can be performed.
4. Maximum number of E/W cycles for which operation is guaranteed.
5. Topr = -40 to 85 ° C (D3, D7, U3, U7) / -20 to 85 ° C (D5, D9, U5, U9).
6. Referenced to V
7. Table 5.7 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.6.
8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to
9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (D7, D9, U7 and U9).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For
example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the
total number of times erasure is used.
at least three times until erase error disappears.
V
Jan 10, 2006
CC1
Flash Program, Erase Voltage
= 3.3 V ± 0.3 V or 5.0 V ± 0.5 V
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
(V
Erase All Unlocked Blocks Time
Flash Memory Circuit Stabilization Wait Time
Data Hold Time
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
(V
Flash Memory Circuit Stabilization Wait Time
Data Hold Time
U5)
CC1
Flash Memory Version Electrical Characteristics
U7, U9) (Block A and Block 1
CC1
Characteristics (at T
-20 to 85 °C(D9, U9))
Flash Memory Version Electrical Characteristics
Flash Memory Version Program / Erase Voltage and Read Operation Voltage
=5.0V )
=5.0V )
CC1
CC1
=4.5 to 5.5V, 3.0 to 3.6V at Topr = 0 to 60 ° C (D3, D5, U3, U5) unless otherwise specified.
= 4.5 to 5.5V, 3.0 to 3.6V at T
Page 45 of 96
(5)
(5)
CC1
CC1
=5.0V )
=5.0V )
Parameter
Parameter
opr
(3, 8, 9)
(3)
(2)
= 0 to 60 °C(D3, D5, U3, U5), T
opr
(7)
= -40 to 85 °C (D7, U7) / -20 to 85 °C (D9, U9) unless otherwise specified.
)
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
4-Kbyte block
Flash Read Operation Voltage
V
CC1
=2.7 to 5.5 V
(1)
(6)
10,000
for 100 cycle products (D3, D5, U3,
for 10,000 cycle products (D7, D9,
Min.
Min.
100
opr
10
10
(4)
= -40 to 85 °C(D7, U7) / T
Standard
Standard
Typ.
Typ.
5. Electrical Characteristics
0.3
0.3
0.5
0.8
0.3
25
25
25
25
Max.
Max.
200
200
4×n
15
15
4
4
4
4
cycle
cycle
year
year
Unit
Unit
opr
µ s
µ s
µ s
µ s
µ s
µ s
s
s
s
s
s
s
=

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