PIC16F818-I/P Microchip Technology, PIC16F818-I/P Datasheet - Page 33

IC MCU FLASH 1KX14 18-DIP

PIC16F818-I/P

Manufacturer Part Number
PIC16F818-I/P
Description
IC MCU FLASH 1KX14 18-DIP
Manufacturer
Microchip Technology
Series
PIC® 16Fr

Specifications of PIC16F818-I/P

Program Memory Type
FLASH
Program Memory Size
1.75KB (1K x 14)
Package / Case
18-DIP (0.300", 7.62mm)
Core Processor
PIC
Core Size
8-Bit
Speed
20MHz
Connectivity
I²C, SPI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
4 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Processor Series
PIC16F
Core
PIC
Data Bus Width
8 bit
Data Ram Size
128 B
Interface Type
I2C/SPI/SSP
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Number Of Timers
3
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, DM163014
Minimum Operating Temperature
- 40 C
On-chip Adc
5-ch x 10-bit
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
ACICE0202 - ADAPTER MPLABICE 18P 300 MILAC164010 - MODULE SKT PROMATEII DIP/SOIC
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PIC16F818-I/P
Manufacturer:
Microchip Technology
Quantity:
295
An example of the complete four-word write sequence
is shown in Example 3-5. The initial address is loaded
into the EEADRH:EEADR register pair; the four words
of data are loaded using indirect addressing, assuming
that a row erase sequence has already been
performed.
EXAMPLE 3-5:
 2004 Microchip Technology Inc.
; This write routine assumes the following:
; 1. The 32 words in the erase block have already been erased.
; 2. A valid starting address (the least significant bits = '00') is loaded into EEADRH:EEADR
; 3. This example is starting at 0x100, this is an application dependent setting.
; 4. The 8 bytes (4 words) of data are loaded, starting at an address in RAM called ARRAY.
; 5. This is an example only, location of data to program is application dependent.
; 6. word_block is located in data memory.
LOOP
BANKSEL EECON1
BSF
BSF
BCF
BANKSEL word_block
MOVLW
MOVWF
BANKSEL EEADRH
MOVLW
MOVWF
MOVLW
MOVWF
BANKSEL ARRAY
MOVLW
MOVWF
BANKSEL EEDATA
MOVF
MOVWF
INCF
MOVF
MOVWF
INCF
BANKSEL EECON1
MOVLW
MOVWF
MOVLW
MOVWF
BSF
NOP
NOP
BANKSEL EEADR
INCF
BANKSEL word_block
DECFSZ
GOTO
BANKSEL EECON1
BCF
BSF
EECON1, EEPGD
EECON1, WREN
EECON1, FREE
.4
word_block
0x01
EEADRH
0x00
EEADR
ARRAY
FSR
INDF, W
EEDATA
FSR, F
INDF, W
EEDATH
FSR, F
0x55
EECON2
0xAA
EECON2
EECON1, WR
EEADR, f
word_block, f
loop
EECON1, WREN
INTCON, GIE
WRITING TO FLASH PROGRAM MEMORY
;prepare for WRITE procedure
;point to program memory
;allow write cycles
;perform write only
;prepare for 4 words to be written
;Start writing at 0x100
;load HIGH address
;load LOW address
;initialize FSR to start of data
;indirectly load EEDATA
;increment data pointer
;indirectly load EEDATH
;increment data pointer
;required sequence
;set WR bit to begin write
;instructions here are ignored as processor
;load next word address
;have 4 words been written?
;NO, continue with writing
;YES, 4 words complete, disable writes
;enable interrupts
PIC16F818/819
DS39598E-page 31

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