LPC2103FBD48,118 NXP Semiconductors, LPC2103FBD48,118 Datasheet - Page 27

• Manufacturer Part Number: LPC2103FBD48,118
• Description: IC ARM7 MCU FLASH 32K 48-LQFP
• Manufacturer: NXP Semiconductors
• Series: LPC2100r

Specifications of LPC2103FBD48,118

• Core Processor: ARM7
• Core Size: 16/32-Bit
• Speed: 70MHz
• Connectivity: I²C, Microwire, SPI, SSI, SSP, UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 32
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 1.65 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-LQFP
• Processor Series: LPC21
• Core: ARM7TDMI-S
• Data Bus Width: 32 bit
• Data Ram Size: 8 KB
• Interface Type: I2C, JTAG, SPI, SSP, UART
• Maximum Clock Frequency: 70 MHz
• Number Of Programmable I/os: 32
• Number Of Timers: 4
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: MDK-ARM, RL-ARM, ULINK2, DB-LQFP48-LPC2103, MCB2103, MCB2103U, MCB2103UME, KSK-LPC2103-01, KSK-LPC2103-01PL, KSK-LPC2103-02
• Development Tools By Supplier: OM10079, OM10081, OM10090
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 10 bit, 8 Channel
• For Use With: 568-4302 - BOARD EVAL LPC210X KS2103 JLINK568-4301 - BOARD EVAL LPC210X KS2103568-4300 - BOARD EVAL LPC210X MCB2103568-4297 - BOARD EVAL LPC21XX MCB2100MCB2103UME - BOARD EVAL MCB2103 + ULINK-MEMCB2103U - BOARD EVAL MCB2103 + ULINK2622-1013 - BOARD FOR LPC2103 48-LQFP622-1008 - BOARD FOR LPC9103 10-HVSONMCB2103 - BOARD EVAL NXP LPC2101/2101/2103
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details
• Other names: 935280966118; LPC2103FBD48-T; LPC2103FBD48-T

NXP Semiconductors
LPC2101_02_03_4
Product data sheet
8.1 Power consumption in Deep power-down mode
Fig 6.
Fig 7.
I
DD(CORE)
( A
( A
I
BAT
1.25
0.75
12.5
1.5
0.5
7.5
Test conditions: Deep power-down mode entered; RTC off; SRAM off;
V
Core supply current I
voltages
15
10
Test conditions: Deep power-down mode entered; V
V
Battery supply current I
1
5
i(VBAT)
DD(3V3)
40
40
= V
= V
DD(3V3)
DDA
= 3.3 V.
Rev. 04 — 2 June 2009
= V
15
15
DDA
DD(CORE)
= 3.3 V.
BAT
measured at different temperatures and conditions
10
10
measured at different temperatures and supply
Single-chip 16-bit/32-bit microcontrollers
V
RTC on; SRAM on
RTC on; SRAM off
DD(1V8)
35
35
i(BAT)
=1.8 V
= 3.3 V; V
1.7 V
LPC2101/02/03
RTC off; SRAM on
RTC off; SRAM off
DD(1V8)
60
60
Temperature ( C)
Temperature ( C)
1.65 V
= 1.8 V;
002aae680
002aae681
© NXP B.V. 2009. All rights reserved.
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