ST10F272M-4QR3 STMicroelectronics, ST10F272M-4QR3 Datasheet - Page 151
ST10F272M-4QR3
Manufacturer Part Number
ST10F272M-4QR3
Description
MCU 16BIT 256K FLASH 144-PQFP
Manufacturer
STMicroelectronics
Series
ST10r
Datasheet
1.ST10F272M-4TR3.pdf
(176 pages)
Specifications of ST10F272M-4QR3
Core Processor
ST10
Core Size
16-Bit
Speed
40MHz
Connectivity
ASC, CAN, EBI/EMI, I²C, SSC, UART/USART
Peripherals
POR, PWM, WDT
Number Of I /o
111
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
20K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 24x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
144-MQFP, 144-PQFP
Processor Series
ST10F27x
Core
ST10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ST10F272M-4QR3
Manufacturer:
STMicroelectronics
Quantity:
10 000
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ST10F272M
Note:
24.8.14
24.8.15
Note:
Figure 49. External clock drive XTAL1
When direct drive is selected, an external clock source can be used to drive XTAL1. The
maximum frequency of the external clock source depends on the duty cycle: When 40 MHz
is used, 50% duty cycle is granted (low phase = high phase = 12.5 ns); when for instance
20 MHz is used, a 25 % duty cycle can be accepted (minimum phase, high or low, again
equal to 12.5 ns).
Memory cycle variables
The tables below use three variables which are derived from the BUSCONx registers and
represent the special characteristics of the programmed memory cycle. The following table
describes how these variables are to be computed.
Table 69.
External memory bus timing
The following sections include the external memory bus timings. The given values are
computed for a maximum CPU clock of 40 MHz.
All external memory bus timings and SSC timings listed in the following tables are granted
by design characterization and not fully tested in production.
ALE extension
Memory cycle time wait states
Memory tri-state time
Description
Memory cycle variables
t
1
V
IH2
Symbol
t
t
t
A
C
F
t
2
t
3
TCL x [ALECTL]
2TCL x (15 - [MCTC])
2TCL x (1 - [MTTC])
t
V
OSC
IL2
Electrical characteristics
Values
t
4
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