MC9S08QE8CLC Freescale Semiconductor, MC9S08QE8CLC Datasheet - Page 29

• Manufacturer Part Number: MC9S08QE8CLC
• Description: IC MCU 8BIT 8K FLASH 32-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QE8CLC

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 26
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-LQFP
• Cpu Family: HCS08
• Device Core Size: 8b
• Frequency (max): 20MHz
• Interface Type: I2C/SCI/SPI
• Total Internal Ram Size: 512Byte
• # I/os (max): 26
• Number Of Timers - General Purpose: 2
• Operating Supply Voltage (typ): 2.5/3.3V
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 1.8V
• On-chip Adc: 10-chx12-bit
• Instruction Set Architecture: CISC
• Operating Temp Range: -40C to 85C
• Operating Temperature Classification: Industrial
• Mounting: Surface Mount
• Pin Count: 32
• Package Type: LQFP
• Processor Series: S08QE
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 512 B
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 26
• Number Of Timers: 2
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMOQE128, EVBQE128
• Minimum Operating Temperature: - 40 C
• Package: 32LQFP
• Family Name: HCS08
• Maximum Speed: 20 MHz
• Operating Supply Voltage: 2.5|3.3 V
• For Use With: DEMO9S08QE8 - BOARD DEMO FOR MC9S08Q
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Compliant

3.13
This section provides details about program/erase times and program-erase endurance for the flash
memory.
Program and erase operations do not require any special power sources other than the normal V
For more detailed information about program/erase operations, see the Memory section.
3.14
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the
MCU resides. Board design and layout, circuit topology choices, location and characteristics of external
components as well as MCU software operation all play a significant role in EMC performance. The
system designer should consult Freescale applications notes such as AN2321, AN1050, AN1263,
AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC performance.
Freescale Semiconductor
1
2
3
4
5
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
C
D
D
D
D
P
P
P
P
C
C
DD
Flash Specifications
EMC Performance
Supply voltage for program/erase
–40 C to 85 C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
= 3.0 V, bus frequency = 4.0 MHz.
T
T = 25 C
L
to T
H
= –40C to 85 C
Characteristic
5
2
2
3
3
1
4
MC9S08QE8 Series Data Sheet, Rev. 8
2
Table 18. Flash Characteristics
2
V
Symbol
RI
RI
prog/erase
V
f
t
t
t
t
t
t
FCLK
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DDBP
DDPE
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
15
5
100,000
Typical
20,000
4000
100
—
—
—
—
—
9
4
4
6
Electrical Characteristics
Max
6.67
200
3.6
3.6
—
—
—
—
—
DD
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
s
V
V
supply.
29