R5F21272SNFP#U0 Renesas Electronics America, R5F21272SNFP#U0 Datasheet - Page 371

IC R8C/27 MCU FLASH 32LQFP

R5F21272SNFP#U0

Manufacturer Part Number
R5F21272SNFP#U0
Description
IC R8C/27 MCU FLASH 32LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/27r
Datasheet

Specifications of R5F21272SNFP#U0

Core Processor
R8C
Core Size
16/32-Bit
Speed
20MHz
Connectivity
I²C, LIN, SIO, SSU, UART/USART
Peripherals
LED, POR, Voltage Detect, WDT
Number Of I /o
25
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
32-LQFP
For Use With
R0K521276S000BE - KIT DEV RSK-R8C/26-29R0E521000EPB00 - PROBE EMULATOR FOR PC7501
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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R8C/26 Group, R8C/27 Group
Rev.2.10
REJ09B0278-0210
19. Flash Memory
19.1
Table 19.1
NOTES:
Table 19.2
Flash memory operating mode
Division of erase block
Programming method
Erase method
Programming and erasure control method
Rewrite control method
Number of commands
Programming and
erasure
endurance
ID code check function
ROM code protect
Function
Areas which can
be rewritten
Operating mode
ROM Programmer None
In the flash memory, rewrite operations to the flash memory can be performed in three modes: CPU rewrite,
standard serial I/O, and parallel I/O.
Table 19.1 lists the Flash Memory Performance (refer to Tables 1.1 and 1.2 Functions and Specifications for
items not listed in Table 19.1).
Flash memory
Rewrite mode
1. Definition of programming and erasure endurance
2. Blocks A and B are implemented only in the R8C/27 group.
3. To perform programming and erasure, use VCC = 2.7 to 5.5 V as the supply voltage. Do not perform
The programming and erasure endurance is defined on a per-block basis. If the programming and erasure
endurance is n (n = 100 or 10,000), each block can be erased n times. For example, if 1,024 1-byte writes are
performed to different addresses in block A, a 1-Kbyte block, and then the block is erased, the programming/
erasure endurance still stands at one. When performing 100 or more rewrites, the actual erase count can be
reduced by executing programming operations in such a way that all blank areas are used before performing an
erase operation. Avoid rewriting only particular blocks and try to average out the programming and erasure
endurance of the blocks. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
programming and erasure at less than 2.7 V.
Overview
Sep 26, 2008
(1)
Flash Memory Performance
Flash Memory Rewrite Modes
Item
Blocks 0 and 1 (program
ROM)
Blocks A and B (data
flash)
User ROM area is rewritten by executing
software commands from the CPU.
EW0 mode: Rewritable in the RAM
EW1 mode: Rewritable in flash memory
User ROM area
Single chip mode
Page 352 of 453
(2)
CPU Rewrite Mode
(3)
3 modes (CPU rewrite, standard serial I/O, and parallel I/O)
Refer to Figures 19.1 and 19.2
Byte unit
Block erase
Program and erase control by software command
Rewrite control for blocks 0 and 1 by FMR02 bit in FMR0 register
Rewrite control for block 0 by FMR15 bit and block 1 by FMR16 bit in
FMR1 register
5 commands
R8C/26 Group: 100 times; R8C/27 Group: 1,000 times
10,000 times
Standard serial I/O mode supported
Parallel I/O mode supported
User ROM area is
rewritten by a
dedicated serial
programmer.
User ROM area
Boot mode
Serial programmer Parallel programmer
Standard Serial I/O
Specification
Mode
User ROM area is
rewritten by a
dedicated parallel
programmer.
User ROM area
Parallel I/O mode
Parallel I/O Mode
19. Flash Memory

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