R5F21272SNFP#U0 Renesas Electronics America, R5F21272SNFP#U0 Datasheet - Page 429

IC R8C/27 MCU FLASH 32LQFP

R5F21272SNFP#U0

Manufacturer Part Number
R5F21272SNFP#U0
Description
IC R8C/27 MCU FLASH 32LQFP
Manufacturer
Renesas Electronics America
Series
R8C/2x/27r
Datasheet

Specifications of R5F21272SNFP#U0

Core Processor
R8C
Core Size
16/32-Bit
Speed
20MHz
Connectivity
I²C, LIN, SIO, SSU, UART/USART
Peripherals
LED, POR, Voltage Detect, WDT
Number Of I /o
25
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.2 V ~ 5.5 V
Data Converters
A/D 12x10b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
32-LQFP
For Use With
R0K521276S000BE - KIT DEV RSK-R8C/26-29R0E521000EPB00 - PROBE EMULATOR FOR PC7501
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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R8C/26 Group, R8C/27 Group
Rev.2.10
REJ09B0278-0210
Table 20.38
NOTES:
t
d(SR-SUS)
Symbol
1. V
2. Definition of programming/erasure endurance
3. Endurance to guarantee all electrical characteristics after program and erase. (1 to Min. value can be guaranteed).
4. Standard of block A and block B when program and erase endurance exceeds 1,000 times. Byte program time to 1,000 times
5. In a system that executes multiple programming operations, the actual erasure count can be reduced by writing to sequential
6. If an error occurs during block erase, attempt to execute the clear status register command, then execute the block erase
7. Customers desiring program/erase failure rate information should contact their Renesas technical support representative.
8. 125 ° C for K version.
9. The data hold time includes time that the power supply is off or the clock is not supplied.
The programming and erasure endurance is defined on a per-block basis.
If the programming and erasure endurance is n (n = 10,000), each block can be erased n times. For example, if 1,024 1-byte
writes are performed to different addresses in block A, a 1 Kbyte block, and then the block is erased, the
programming/erasure endurance still stands at one.
However, the same address must not be programmed more than once per erase operation (overwriting prohibited).
is the same as that in program ROM.
addresses in turn so that as much of the block as possible is used up before performing an erase operation. For example,
when programming groups of 16 bytes, the effective number of rewrites can be minimized by programming up to 128 groups
before erasing them all in one operation. In addition, averaging the erasure endurance between blocks A and B can further
reduce the actual erasure endurance. It is also advisable to retain data on the erasure endurance of each block and limit the
number of erase operations to a certain number.
command at least three times until the erase error does not occur.
CC
Sep 26, 2008
= 2.7 to 5.5 V at T
Program/erase endurance
Byte program time
(program/erase endurance ≤ 1,000 times)
Byte program time
(program/erase endurance > 1,000 times)
Block erase time
(program/erase endurance ≤ 1,000 times)
Block erase time
(program/erase endurance > 1,000 times)
Time delay from suspend request until
suspend
Interval from erase start/restart until
following suspend request
Interval from program start/restart until
following suspend request
Time from suspend until program/erase
restart
Program, erase voltage
Read voltage
Program, erase temperature
Data hold time
Flash Memory (Data flash Block A, Block B) Electrical Characteristics
(9)
opr
Parameter
Page 410 of 453
= -40 to 85 ° C (J version) / -40 to 125 ° C (K version), unless otherwise specified.
(2)
Ambient temperature = 55 ° C
Conditions
10,000
Min.
650
2.7
2.7
-40
20
0
(3)
20. Electrical Characteristics
Typ.
0.2
0.3
Standard
50
65
97 + CPU clock
3 + CPU clock
× 6 cycles
× 4 cycles
(4)
Max.
85
400
5.5
5.5
9
(8)
times
year
Unit
µ s
µ s
µ s
µ s
µ s
ns
° C
V
V
s
s

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