M38039FFLHP#U0 Renesas Electronics America, M38039FFLHP#U0 Datasheet - Page 71

• Manufacturer Part Number: M38039FFLHP#U0
• Description: IC 3803 MCU FLASH 64LQFP
• Manufacturer: Renesas Electronics America
• Series: 740/38000r

Specifications of M38039FFLHP#U0

• Core Processor: 740
• Core Size: 8-Bit
• Speed: 16.8MHz
• Connectivity: SIO, UART/USART
• Peripherals: PWM, WDT
• Number Of I /o: 56
• Program Memory Size: 60KB (60K x 8)
• Program Memory Type: FLASH
• Ram Size: 2K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 16x10b; D/A 2x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 85°C
• Package / Case: 64-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

3803 Group (Spec.L)
Rev.1.01
REJ03B0212-0101
FLASH MEMORY MODE
The 3803 group (Spec.L)’s flash memory version has the flash
memory that can be rewritten with a single power source.
For this flash memory, three flash memory modes are available
in which to read, program, and erase: the parallel I/O and
standard serial I/O modes in which the flash memory can be
manipulated using a programmer and the CPU rewrite mode in
which the flash memory can be manipulated by the Central
Processing Unit (CPU).
Summary
Table 9 lists the summary of the 3803 group (Spec.L) flash
memory version.
Table 9
NOTE:
Table 10 Electrical characteristics of flash memory (program ROM)
NOTES:
Power source voltage (V
Program/Erase VPP voltage (V
Flash memory mode
Erase block division
Program method
Erase method
Program/Erase control method
Number of commands
Number of program/Erase times
ROM code protection
Symbol
1. The Boot ROM area has had a standard serial I/O mode control program stored in it when shipped from the factory.
1. V
2. Definition of programming/erase count
3. This is the number of times for which all electrical characteristics are guaranteed after a programming or erase operation. (The
4. On systems where reprogramming is performed a large number of times, it is possible to reduce the effective number of overwrites
5. If a block erase error occurs, execute the clear status register command followed by the block erase command a minimum of three
−
−
This Boot ROM area can be erased and written in only parallel I/O mode.
The programming/erase count refers to the number of erase operations per block. For example, if block A is a 2 Kbyte block and
2,048 1-byte writes are performed, all to different addresses, after which block A is erased, the programming/erase count is 1. Note
that for each erase operation it is not possible to perform more than one programming (write) operation to the same address
(overwrites prohibited).
guarantee covers the range from 1 to maximum value.)
by sequentially shifting the write address, so that as much of the available area of the block is used up through successive
programming (write) operations before an erase operation is performed. For example, if each programming operation uses 16 bytes
of space, a maximum of 128 programming operations may be performed before it becomes necessary to erase the block in order to
continue. In this way the effective number of overwrites can be kept low. The effective overwrite count can be further reduced by
evenly dividing operations between block A and block B. It is recommended that data be retained on the number of times each
block has been erased and a limit count set.
times and until the erase error is no longer generated.
CC
= AV
Summary of 3803 group (Spec.L)’s flash memory version
Byte programming time
Block erase time
Jan 25, 2008
CC
= 2.7 V to 5.5 V, Topr = 0 °C to 60 °C, unless otherwise noted.
User ROM area/Data ROM area
Boot ROM area
Parameter
CC
Item
)
Page 69 of 117
PP
(Block 1)
(Block 2)
(Block 3)
(Block A, B)
)
(1)
V
V
CC
CC
= 5.0 V, Topr = 25 ° C
= 5.0 V, Topr = 25 ° C
Test conditions
V
V
3 modes; Parallel I/O mode, Standard serial I/O mode, CPU
rewrite mode
Refer to Figure 67.
Not divided (4 Kbytes)
In units of bytes
Block erase
Program/Erase control by software command
5 commands
100(Max.)
Available in parallel I/O mode and standard serial I/O mode
CC
CC
This flash memory version has some blocks on the flash memory
as shown in Figure 67 and each block can be erased.
In addition to the ordinary User ROM area to store the MCU
operation control program, the flash memory has a Boot ROM
area that is used to store a program to control rewriting in CPU
rewrite and standard serial I/O modes. This Boot ROM area has
had a standard serial I/O mode control program stored in it when
shipped from the factory. However, the user can write a rewrite
control program in this area that suits the user’s application
system. This Boot ROM area can be rewritten in only parallel I/O
mode.
= 2.7 to 5.5 V
= 2.7 to 5.5 V
Specifications
Min.
−
−
−
−
−
Limits
Typ.
0.5
0.9
1.3
0.3
60
Max.
400
9
9
9
9
Unit
µ s
s
s
s
s