D12312SVF20V Renesas Electronics America, D12312SVF20V Datasheet - Page 630
D12312SVF20V
Manufacturer Part Number
D12312SVF20V
Description
IC H8S/2312S MCU ROMLESS 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of D12312SVF20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D12312SVF20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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Section 17 ROM
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or
erasing, so the control program that performs programming and erasing should be run in on-chip
RAM or external memory. When the program is located in external memory, an instruction for
programming the flash memory and the following instruction should be located in on-chip RAM.
Figure 17.14 shows the procedure for executing the program/erase control program when
transferred to on-chip RAM.
Rev.7.00 Feb. 14, 2007 page 596 of 1108
REJ09B0089-0700
Notes: Do not apply a constant high level to the FWE pin. Apply a high level to the FWE pin
only when the flash memory is programmed or erased. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent
overprogramming or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 17.12,
Flash Memory Programming and Erasing Precautions.
Figure 17.14 User Program Mode Execution Procedure
Write the FWE assessment program and
transfer program (and the program/erase
control program if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
MD2, MD1, MD0 = 110, 111
program in RAM area
program to RAM
FWE = high*
Clear FWE*
Reset-start
program
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