D12312SVF20V Renesas Electronics America, D12312SVF20V Datasheet - Page 713
D12312SVF20V
Manufacturer Part Number
D12312SVF20V
Description
IC H8S/2312S MCU ROMLESS 100QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Specifications of D12312SVF20V
Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
POR, PWM, WDT
Number Of I /o
70
Program Memory Type
ROMless
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
100-QFP
For Use With
EDK2329 - DEV EVALUATION KIT H8S/2329
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Program Memory Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
D12312SVF20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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17.20.6 Auto-Erase Mode
• Auto-erase mode supports only total memory erasing.
• Do not perform a command write during auto-erasing.
• Confirm normal end of auto-erasing by checking I/O
• Status polling I/O
AC Characteristics
Table 17.41 AC Characteristics in Auto-Erase Mode
Conditions: V
Item
Command write cycle
CE hold time
CE setup time
Data hold time
Data setup time
Write pulse width
Status polling start time
Status polling access time
Memory erase time
WE rise time
WE fall time
be used for this purpose (the I/O
operation).
as the next command write has not been performed, reading is possible by enabling CE and
OE.
CC
= 3.3 V ±0.3 V, V
6
and I/O
7
Symbol
t
t
t
t
t
t
t
t
t
t
t
pin information is retained until the next command write. As long
nxtc
ceh
ces
dh
ds
wep
ests
spa
erase
r
f
SS
7
status polling pin is used to identify the end of an auto-erase
= 0 V, T
a
= 25°C ±5°C
Min
20
0
0
50
50
70
1
—
100
—
—
Rev.7.00 Feb. 14, 2007 page 679 of 1108
6
. Alternatively, status read mode can also
Max
—
—
—
—
—
—
—
150
40000
30
30
REJ09B0089-0700
Unit
μs
ns
ns
ns
ns
ns
ms
ns
ms
ns
ns
Section 17 ROM
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