M30622F8PFP#D5C Renesas Electronics America, M30622F8PFP#D5C Datasheet - Page 87

IC M16C MCU FLASH 64K 100-QFP

M30622F8PFP#D5C

Manufacturer Part Number
M30622F8PFP#D5C
Description
IC M16C MCU FLASH 64K 100-QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/60r
Datasheet

Specifications of M30622F8PFP#D5C

Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
I²C, IEBus, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
64KB (64K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-

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M16C/62P Group (M16C/62P, M16C/62PT)
Rev.2.41
REJ03B0001-0241
Table 5.53
Table 5.54
NOTES:
Table 5.55
t
t
PS
PS
Symbol
Symbol
1. Referenced to V
2. n denotes the number of block erases.
3. Program and Erase Endurance refers to the number of times a block erase can be performed.
4. Maximum number of E/W cycles for which operation is guaranteed.
5. Ta (ambient temperature)=55 ° C. As to the data hold time except Ta=55 ° C, please contact Renesas Technology Corp. or an
6. Referenced to V
7. Table 5.54 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 5.53.
8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites, write to
9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase command
10. Set the PM17 bit in the PM1 register to “1” (wait state) when executing more than 100 times rewrites (B7 and U7).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this counts as
one program and erase endurance. Data cannot be written to the same address more than once without erasing the block.
(Rewrite prohibited)
authorized Renesas Technology Corp. product distributor.
otherwise specified.
unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are used. For
example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to track the
total number of times erasure is used.
at least three times until erase error disappears.
Jan 10, 2006
Flash Program, Erase Voltage
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
(V
Erase All Unlocked Blocks Time
Flash Memory Circuit Stabilization Wait Time
Data Hold Time
Program and Erase Endurance
Word Program Time (V
Lock Bit Program Time
Block Erase Time
(V
Flash Memory Circuit Stabilization Wait Time
Data Hold Time
CC1
(Block A and Block 1
CC1
Characteristics (at T
to 125 °C (B7, U7 (V version))
Flash Memory Version Electrical Characteristics
Flash Memory Version Electrical Characteristics
Flash Memory Version Program/Erase Voltage and Read Operation Voltage
V
CC1
=5.0V )
=5.0V )
CC1
CC1
= 5.0 V ± 0.5 V
=4.5 to 5.5V at T
= 4.5 to 5.5V at T
Page 85 of 96
(5)
(5)
CC1
CC
1=5.0V )
=5.0V )
opr
Parameter
Parameter
opr
opr
(7)
= 0 to 60 ° C unless otherwise specified.
(3, 8, 9)
(3)
= − 40 to 85 ° C (B7, U7 (T version)) / − 40 to 125 ° C (B7, U7 (V version)) unless
(2)
= 0 to 60 °C(B, U), Topr = −40 to 85 °C (B7, U7 (T version)) / −40
)
4-Kbyte block
8-Kbyte block
32-Kbyte block
64-Kbyte block
4-Kbyte block
Flash Read Operation Voltage
V
CC1
=4.0 to 5.5 V
(6)
(1)
10,000
for 100 cycle products (B, U)
for 10,000 cycle products (B7, U7)
Min.
Min.
100
20
20
4
4
(4)
Standard
Standard
Typ.
Typ.
5. Electrical Characteristics
0.3
0.3
0.5
0.8
0.3
25
25
25
25
Max.
Max.
200
200
4×n
15
15
4
4
4
4
cycle
cycle
year
year
Unit
Unit
µ s
µ s
µ s
µ s
µ s
µ s
s
s
s
s
s
s

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