HD64F3644PV Renesas Electronics America, HD64F3644PV Datasheet - Page 134

• Manufacturer Part Number: HD64F3644PV
• Description: IC H8/3644 MCU FLASH 32K 64SDIP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Lr

Specifications of HD64F3644PV

• Core Processor: H8/300L
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 64-SDIP (0.750", 19.05mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 ROM
6.4.2
The H8/3644F has 32 kbytes of on-chip flash memory, the H8/3643F has 24 kbytes, and the
H8/3642AF has 16 kbytes. The ROM is connected to the CPU by a 16-bit data bus. The CPU
accesses flash memory in two states for both byte-size and word-size instructions.
The flash memory is allocated to addresses H'0000 to H'7FFF in the H8/3644F, to addresses
H'0000 to H'5FFF in the H8/3643F, and to addresses H'0000 to H'3FFF in the H8/3642AF.
6.4.3
The features of the flash memory are summarized below.
Rev. 6.00 Sep 12, 2006 page 112 of 526
REJ09B0326-0600
Five flash memory operating modes
There are five flash memory operating modes: program mode, program-verify mode, erase
mode, erase-verify mode, and prewrite-verify mode.
Erase block specification
Blocks to be erased in the flash memory space can be specified by setting the corresponding
register bits. The address space includes a large block area (four blocks with sizes from 4
kbytes to 8 kbytes) and a small block area (eight blocks with sizes from 128 bytes to 1 kbyte).
Programming/erase times
The flash memory programming time is 50 µs (typ.) per byte, and the erase time is 1 s (typ.).
Erase-program cycles
Flash memory contents can be erased and reprogrammed up to 100 times.
On-board programming modes
There are two modes in which flash memory can be programmed, erased, and verified on-
board: boot mode and user program mode.
Automatic bit rate adjustment
For data transfer in boot mode, the chip’s bit rate can be automatically adjusted to match the
transfer bit rate of the host (max. 9600 bps).
PROM mode
Flash memory can be programmed and erased in PROM mode, using a general-purpose PROM
programmer, as well as in on-board programming mode. The specifications for programming,
erasing, verifying, etc., are the same as for standard HN28F101 flash memory.
Mode Pin Settings and ROM Space
Features