HD64F3644PV Renesas Electronics America, HD64F3644PV Datasheet - Page 140

• Manufacturer Part Number: HD64F3644PV
• Description: IC H8/3644 MCU FLASH 32K 64SDIP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Lr

Specifications of HD64F3644PV

• Core Processor: H8/300L
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 64-SDIP (0.750", 19.05mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

Section 6 ROM
6.5.3
EBR2 is an 8-bit register that specifies small flash-memory blocks for programming or erasure.
EBR2 is initialized to H'00 upon reset, in sleep mode, subsleep mode, watch mode, and standby
mode, and when 12 V is not applied to FV
block is selected and can be programmed and erased. The erase block map is shown in figure 6.7,
and the correspondence between bits and erase blocks is shown in table 6.8.
Note:
Bits 7 to 0 Small Block 7 to 0 (SB7 to SB0): These bits select small blocks (SB7 to SB0) to be
programmed and erased.
Bits 7 to 0:
SB7 to SB0
0
1
Rev. 6.00 Sep 12, 2006 page 118 of 526
REJ09B0326-0600
Bit
Initial value
Read/Write
* Word access cannot be used on this register; byte access must be used. For
Erase Block Register 2 (EBR2)
information on access to this register, see note 11 in section 6.9, Flash Memory
Programming and Erasing Precautions. LB3 is invalid in the H8/3643F, and LB3 and
LB2 are invalid in the H8/3642AF.
R/W *
SB7
Description
Block SB7 to SB0 is not selected
Block SB7 to SB0 is selected
7
0
R/W *
SB6
0
6
R/W *
SB5
5
0
PP
. When a bit in EBR2 is set to 1, the corresponding
R/W *
SB4
4
0
R/W *
SB3
3
0
R/W *
SB2
2
0
R/W *
SB1
1
0
(initial value)
R/W *
SB0
0
0