HD64F3644PV Renesas Electronics America, HD64F3644PV Datasheet - Page 15

• Manufacturer Part Number: HD64F3644PV
• Description: IC H8/3644 MCU FLASH 32K 64SDIP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Lr

Specifications of HD64F3644PV

• Core Processor: H8/300L
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 64-SDIP (0.750", 19.05mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

5.4
5.5
5.6
5.7
5.8
Section 6 ROM
6.1
6.2
6.3
6.4
6.5
5.3.1
5.3.2
5.3.3
Watch Mode...................................................................................................................... 96
5.4.1
5.4.2
5.4.3
Subsleep Mode.................................................................................................................. 97
5.5.1
5.5.2
Subactive Mode................................................................................................................. 98
5.6.1
5.6.2
5.6.3
Active (Medium-Speed) Mode.......................................................................................... 99
5.7.1
5.7.2
5.7.3
Direct Transfer .................................................................................................................. 100
Overview........................................................................................................................... 103
6.1.1
PROM Mode..................................................................................................................... 104
6.2.1
6.2.2
Programming..................................................................................................................... 105
6.3.1
6.3.2
6.3.3
Flash Memory Overview................................................................................................... 111
6.4.1
6.4.2
6.4.3
6.4.4
6.4.5
6.4.6
Flash Memory Register Descriptions ................................................................................ 115
6.5.1
6.5.2
6.5.3
Transition to Standby Mode................................................................................. 95
Clearing Standby Mode........................................................................................ 95
Oscillator Settling Time after Standby Mode Is Cleared ..................................... 96
Transition to Watch Mode ................................................................................... 96
Clearing Watch Mode .......................................................................................... 97
Oscillator Settling Time after Watch Mode Is Cleared ........................................ 97
Transition to Subsleep Mode ............................................................................... 97
Clearing Subsleep Mode ...................................................................................... 98
Transition to Subactive Mode .............................................................................. 98
Clearing Subactive Mode..................................................................................... 98
Operating Frequency in Subactive Mode ............................................................. 99
Transition to Active (Medium-Speed) Mode ....................................................... 99
Clearing Active (Medium-Speed) Mode .............................................................. 99
Operating Frequency in Active (Medium-Speed) Mode ...................................... 99
Block Diagram ..................................................................................................... 103
Setting to PROM Mode........................................................................................ 104
Memory Map ....................................................................................................... 104
Writing and Verifying .......................................................................................... 106
Programming Precautions .................................................................................... 109
Reliability of Programmed Data........................................................................... 110
Principle of Flash Memory Operation.................................................................. 111
Mode Pin Settings and ROM Space..................................................................... 112
Features................................................................................................................ 112
Block Diagram ..................................................................................................... 113
Pin Configuration................................................................................................. 114
Register Configuration ......................................................................................... 114
Flash Memory Control Register (FLMCR) .......................................................... 115
Erase Block Register 1 (EBR1) ........................................................................... 117
Erase Block Register 2 (EBR2) ........................................................................... 118
..................................................................................................................... 103
Rev. 6.00 Sep 12, 2006 page xiii of xx