HD64F3644PV Renesas Electronics America, HD64F3644PV Datasheet - Page 185

• Manufacturer Part Number: HD64F3644PV
• Description: IC H8/3644 MCU FLASH 32K 64SDIP
• Manufacturer: Renesas Electronics America
• Series: H8® H8/300Lr

Specifications of HD64F3644PV

• Core Processor: H8/300L
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: SCI
• Peripherals: PWM, WDT
• Number Of I /o: 53
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x8b
• Oscillator Type: Internal
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 64-SDIP (0.750", 19.05mm)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

7. Design a current margin into the programming voltage (V
8. Insure that peak overshoot at the FV
9. Use the recommended algorithms when programming and erasing flash memory.
10. For comments on interrupt handling while flash memory is being programmed or erased, see
11. Notes on accessing flash memory control registers
12 V
Insure that V
programming and erasing. Programming and erasing may become impossible outside this
range.
Connect bypass capacitors as close as possible to the FV
In boot mode start-up, also, bypass capacitors should be connected to the TEST pin in the same
way.
The recommended algorithms enable programming and erasing to be carried out without
subjecting the device to voltage stress or sacrificing program data reliability. When setting the
program (P) or erase (E) bit in the flash memory control register (FLMCR), the watchdog
timer should be set beforehand to prevent the specified time from being exceeded.
section 6.7.9, Interrupt Handling during Flash Memory Programming/Erasing.
a. Flash memory control register access state in each operating mode
b. To check for 12 V application/non-application in user mode
The H8/3644F, H8/3643F, and H8/3642AF have flash memory control registers located at
addresses H'FF80 (FLMCR), H'FF82 (EBR1), and H'FF83 (EBR2). These registers can
only be accessed when 12 V is applied to the flash memory programming power supply
pin, FV
When address H'FF80 is accessed in user mode, if 12 V is being applied to FV
is read/written to, and its initial value after reset is H'80. When 12 V is not being applied to
FV
7 (corresponding to the V
applied to FV
PP
1.0 F
, FLMCR is a reserved area that cannot be modified and always reads H'FF. Since bit
PP
PP
.
Figure 6.24 Example of V
remains within the range 12.0 V ±0.6 V (11.4 V to 12.6 V) during
PP
, application or release of 12 V to FV
PP
bit) is set to 1 at this time regardless of whether or not 12 V is
PP
0.01 F
and TEST pins does not exceed the maximum rating.
PP
Power Supply Circuit Design
Rev. 6.00 Sep 12, 2006 page 163 of 526
PP
PP
PP
and TEST pins.
cannot be determined simply from
) power supply.
FV
PP
REJ09B0326-0600
H8/3644F
Section 6 ROM
PP
, FLMCR