HD64F2338VFC25 Renesas Electronics America, HD64F2338VFC25 Datasheet - Page 825
HD64F2338VFC25
Manufacturer Part Number
HD64F2338VFC25
Description
MCU 3V 256K 144-QFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheet
1.DF2338VFC25V.pdf
(1246 pages)
Specifications of HD64F2338VFC25
Core Processor
H8S/2000
Core Size
16-Bit
Speed
25MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
106
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 12x10b; D/A 4x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
HD64F2338VFC25
Manufacturer:
Renesas Electronics America
Quantity:
10 000
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• User program mode
1.
3.
Initial state
(1) The FWE assessment program that confirms
that the FWE pin has been driven high, and (2)
the program that will transfer the programming/
erase control program to on-chip RAM should be
written into the flash memory by the user
beforehand. (3) The programming/erase control
program should be prepared in the host or in the
flash memory.
Flash memory initialization
The programming/erase program in RAM is
executed, and the flash memory is initialized (to
H’FF). Erasing can be performed in block units,
but not in byte units.
Chip
Chip
Application program
Transfer program
Transfer program
FWE assessment
FWE assessment
Flash memory
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
erase
erase control program
New application
New application
Programming/
program
program
Figure 19.32 User Program Mode (Example)
Host
Host
erase control program
Programming/
RAM
RAM
SCI
SCI
2.
4.
Programming/erase control program transfer
When the FWE pin is driven high, user software
confirms this fact, executes the transfer program
in the flash memory, and transfers the
programming/erase control program to RAM.
Writing new application program
Next, the new application program in the host is
written into the erased flash memory blocks. Do
not write to unerased blocks.
Chip
Chip
Rev.4.00 Sep. 07, 2007 Page 793 of 1210
Application program
Transfer program
New application
FWE assessment
FWE assessment
Transfer program
Flash memory
Flash memory
Boot program
Boot program
(old version)
program
program
program
New application
program
Host
Host
erase control program
erase control program
Programming/
Programming/
Program execution state
RAM
RAM
REJ09B0245-0400
SCI
SCI
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