R5F61668MZN50FPV Renesas Electronics America, R5F61668MZN50FPV Datasheet - Page 1151
R5F61668MZN50FPV
Manufacturer Part Number
R5F61668MZN50FPV
Description
MCU FLASH 1024K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet
1.R5F61668MZN50FPV.pdf
(1416 pages)
Specifications of R5F61668MZN50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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7. Switching of the memory MATs by FMATS should be needed when programming/erasure of
8. When the program data storage area is within the flash memory area, an error will occur even
In consideration of these conditions, the areas in which the program data can be stored and
executed are determined by the combination of the processing contents, operating mode, and bank
structure of the memory MATs, as shown in tables 25.8 to 25.12.
Table 25.8 Executable Memory MAT
Note:
Processing Contents
Programming
Erasing
the user MAT is operated in user boot mode. The program which switches the memory MATs
should be executed from the on-chip RAM. For details, see section 25.11, Switching between
User MAT and User Boot MAT. Make sure you know which memory MAT is currently
selected when switching them.
when the data stored is normal program data. Therefore, the data should be transferred to the
on-chip RAM to place the address that the FMPDR parameter indicates in an area other than
the flash memory.
*
Programming/Erasure is possible to the user MAT.
User Program Mode
See table 25.9
See table 25.10
Operating Mode
Rev. 1.00 Jan. 29, 2010 Page 1119 of 1380
User Boot Mode*
See table 25.11
See table 25.12
Section 25 Flash Memory
REJ09B0596-0100
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