R5F61668MZN50FPV Renesas Electronics America, R5F61668MZN50FPV Datasheet - Page 1264
R5F61668MZN50FPV
Manufacturer Part Number
R5F61668MZN50FPV
Description
MCU FLASH 1024K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet
1.R5F61668MZN50FPV.pdf
(1416 pages)
Specifications of R5F61668MZN50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Section 28 Power-Down Modes
28.8.6
Deep Software Standby Mode Application Example
(1)
Transition to and Exit from Deep Software Standby Mode
Figure 28.4 shows an example where the transition to deep software standby mode is initiated by a
falling edge on the NMI pin and exit from deep software standby mode is initiated by a rising edge
on the NMI pin.
In this example, falling-edge sensing of NMI interrupts has been specified by clearing the NMIEG
bit in INTCR to 0 (not shown). After an NMI interrupt has been sensed, rising-edge sensing is
specified by setting the DNMIEG bit to 1, the SSBY and DPSBY bits are set to 1, and the
transition to deep software standby mode is triggered by execution of a SLEEP instruction.
After that, deep software standby mode is canceled at the rising edge on the NMI pin.
Rev. 1.00 Jan. 29, 2010 Page 1232 of 1380
REJ09B0596-0100
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