R5F61668MZN50FPV Renesas Electronics America, R5F61668MZN50FPV Datasheet - Page 1389

• Manufacturer Part Number: R5F61668MZN50FPV
• Description: MCU FLASH 1024K ROM 144-LQFP
• Manufacturer: Renesas Electronics America
• Series: H8® H8SX/1600r

Specifications of R5F61668MZN50FPV

• Core Processor: H8SX
• Core Size: 16/32-Bit
• Speed: 50MHz
• Connectivity: EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 92
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• Ram Size: 56K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x10b; D/A 2x8b
• Oscillator Type: External
• Operating Temperature: -20°C ~ 75°C
• Package / Case: 144-LQFP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

30.4
Table 30.9 USB Characteristics when On-Chip USB Transceiver is Used
Conditions: V
Input
Output
USB Characteristics
Input high voltage
Input low voltage
Differential input
sensitivity
Differential common
mode range
Output high voltage
Output low voltage
Crossover voltage
Rising time
Falling time
Ratio of rising time to
falling time
Output resistance
(USD+, USD− pin characteristics)
CKU = 48 MHz, T
Item
CC
= PLLV
CC
= DrV
a
= –20°C to +75°C (regular specifications)
Symbol Min.
V
V
V
V
V
V
V
t
t
t
Z
CC
R
F
RFM
DRV
IH
IL
DI
CM
OH
OL
CRS
= 2.95 V to 3.6 V, V
2.0
⎯
0.2
0.8
2.8
⎯
1.3
4
4
90
28
Max.
⎯
0.8
⎯
2.5
⎯
0.3
2.0
20
20
111.11
44
SS
Rev. 1.00 Jan. 29, 2010 Page 1357 of 1380
= PLLV
V
V
V
V
V
V
V
%
Ω
Unit
ns
ns
Section 30 Electrical Characteristics
SS
Test Conditions
⏐(D+) − (D−)⏐
I
I
(T
Including
R
= DrV
OH
OL
S
R
= 2 mA
= −200 μA
/T
= 22Ω
F
)
SS
= AV
REJ09B0596-0100
SS
Figure 30.57
Figure 30.58
= 0 V,