R5F61668MZN50FPV Renesas Electronics America, R5F61668MZN50FPV Datasheet - Page 1393
R5F61668MZN50FPV
Manufacturer Part Number
R5F61668MZN50FPV
Description
MCU FLASH 1024K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet
1.R5F61668MZN50FPV.pdf
(1416 pages)
Specifications of R5F61668MZN50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Quantity
Price
Company:
Part Number:
R5F61668MZN50FPV
Manufacturer:
REA
Quantity:
5
Company:
Part Number:
R5F61668MZN50FPV
Manufacturer:
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Quantity:
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30.8
Table 30.13 Power-On Reset Circuit and Voltage-Detection Circuit Characteristics
Conditions: V
Note:
Item
Voltage detection
level
Internal reset time
Power-off time*
*
V
Internal reset signal
("L" is enabled)
Power-On Reset Circuit and Voltage-Detection Circuit
Characteristics
CC
Power-off time (t
voltage-detection level of the POR and LVD.
T
a
CC
= – 20 °C to +75 °C (regular specifications)
= PLLV
Voltage detection
circuit (LVD)
Power-on reset
(POR)
CC
, AV
VOFF
Figure 30.59 Power-On Reset Timing
) is the time over which Vcc is lower than minimum value of the
CC
= 3.0 V to 3.6 V, V
V
Symbol Min.
V
V
t
t
POR
VOFF
POR
det
POR
t
POR
3.00
2.48
20
200
ref
= 3.0 V to AV
Typ.
3.10
2.58
35
⎯
Rev. 1.00 Jan. 29, 2010 Page 1361 of 1380
Max.
3.20
2.68
50
⎯
Section 30 Electrical Characteristics
CC
, V
SS
t
VOFF
Unit
V
ms
us
t
= PLLV
POR
SS
REJ09B0596-0100
= AV
Test
Conditions
Figure 30.60
Figure 30.59
Figure 30.59
Figure 30.60
SS
= 0 V,
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