R5F61668MZN50FPV Renesas Electronics America, R5F61668MZN50FPV Datasheet - Page 323
R5F61668MZN50FPV
Manufacturer Part Number
R5F61668MZN50FPV
Description
MCU FLASH 1024K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet
1.R5F61668MZN50FPV.pdf
(1416 pages)
Specifications of R5F61668MZN50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
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Some DRAMs have a self-refresh mode (battery backup mode). The self-refresh mode is a kind of
standby mode and refresh timing and refresh address are controlled internally.
The self-refresh mode is selected by setting the RFSHE and SLFRF bits in REFCR to 1. The CAS
and RAS signals are output as shown in figure 9.56 by executing the SLEEP instruction. Then,
DRAM enters self-refresh mode.
When a CBR refresh is requested on a transition to the standby mode, the CBR refresh is first
performed and then the self-refresh mode is entered.
When the self-refresh mode is used, do not clear the OPE bit in SBYCR to 0.
For details, see section 28.2.1, Standby Control Register (SBYCR).
Self-Refresh Mode
RD/WR
LUCAS
LLCAS
RAS
WE
Bφ
BS
T R
p
T R
Figure 9.56 Self-Refresh Timing
r
High
High
High
Software
standby
Rev. 1.00 Jan. 29, 2010 Page 291 of 1380
Section 9 Bus Controller (BSC)
T R
c3
T R
REJ09B0596-0100
c4
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