R5F61668MZN50FPV Renesas Electronics America, R5F61668MZN50FPV Datasheet - Page 363

MCU FLASH 1024K ROM 144-LQFP

R5F61668MZN50FPV

Manufacturer Part Number
R5F61668MZN50FPV
Description
MCU FLASH 1024K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet

Specifications of R5F61668MZN50FPV

Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
R5F61668MZN50FPV
Manufacturer:
REA
Quantity:
5
Part Number:
R5F61668MZN50FPV
Manufacturer:
Renesas Electronics America
Quantity:
10 000
(3)
When the SDRAM interface is written to, one Trwl cycle is inserted after the Tc2 cycle. The
DACK and EDACK signals stay asserted until the end of the Trwl cycle. The hold time of data
output from an external device can be extended by one cycle.
Figure 9.87 shows an output timing example of the DACK and EDACK signals when TRWL = 1
with DDS = 1, EDDS = 1, DKC = 0 and EDKC = 0.
Figure 9.87 Output Timing Example of DACK and EDACK when TRWL = 1 (Write)
When TRWL = 1
DACK or EDACK
Precharge-sel
Address bus
D15 to D8
SDRAMφ
D7 to D0
DQMLU
DQMLL
RD/WR
RAS
CAS
CKE
WE
CS
BS
Row address
PALL ACTV NOP
T
p
address
Row
T
r
T
Column address 1
c1
WRIT
T
c2
High
T
rwl
Rev. 1.00 Jan. 29, 2010 Page 331 of 1380
NOP
T
Column address 2
c1
WRIT
T
Section 9 Bus Controller (BSC)
c2
T
NOP
rwl
REJ09B0596-0100

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