R5F61668MZN50FPV Renesas Electronics America, R5F61668MZN50FPV Datasheet - Page 364
R5F61668MZN50FPV
Manufacturer Part Number
R5F61668MZN50FPV
Description
MCU FLASH 1024K ROM 144-LQFP
Manufacturer
Renesas Electronics America
Series
H8® H8SX/1600r
Datasheet
1.R5F61668MZN50FPV.pdf
(1416 pages)
Specifications of R5F61668MZN50FPV
Core Processor
H8SX
Core Size
16/32-Bit
Speed
50MHz
Connectivity
EBI/EMI, I²C, IrDA, SCI, SmartCard, USB
Peripherals
DMA, LVD, POR, PWM, WDT
Number Of I /o
92
Program Memory Size
1MB (1M x 8)
Program Memory Type
FLASH
Ram Size
56K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
External
Operating Temperature
-20°C ~ 75°C
Package / Case
144-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
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Price
Company:
Part Number:
R5F61668MZN50FPV
Manufacturer:
REA
Quantity:
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Section 9 Bus Controller (BSC)
(4)
When the SDRAM space is read, the read data settling cycle can be inserted for one cycle using
the clock suspend mode. To enter the clock suspend mode, set the OEE bit in DRAMCR to 1, and
connect the CKE pin.
Figure 9.88 shows an output timing example of the DACK and EDACK signals when CKSPE = 1
with DDS = 1, EDDS = 1, DKC = 0 and EDKC = 0.
Rev. 1.00 Jan. 29, 2010 Page 332 of 1380
REJ09B0596-0100
When CKSPE = 1
Figure 9.88 Output Timing Example of DACK and EDACK when CKSPE = 1
DACK or EDACK
Precharge-sel
Address bus
D15 to D8
SDRAMφ
D7 to D0
DQMLU
DQMLL
RD/WR
RAS
CAS
CKE
WE
CS
BS
Row address
PALL ACTV READ
T
p
address
(Read, CAS Latency = 2)
Row
T
r
T
c1
Column address 1
T
cl
T
NOP
sp
T
c2
READ
T
c1
Column address 2
T
cl
NOP
T
sp
T
c2
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