DF2161BVTE10 Renesas Electronics America, DF2161BVTE10 Datasheet - Page 789
DF2161BVTE10
Manufacturer Part Number
DF2161BVTE10
Description
MCU 3V 128K 144-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet
1.DF2160BVT10V.pdf
(847 pages)
Specifications of DF2161BVTE10
Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
114
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2161BVTE10
HD64F2161BVTE10
HD64F2161BVTE10
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5. When IICS = 0, ICE = 0, and KBIOE = 0. Low-level output when the bus drive function
6. The upper limit of the port 6 applied voltage is V
7. The upper limit of the port A applied voltage is V
8. The port A characteristics depend on V
When the SCK0, SCK1, or SCK2 pin is used as an output, an external pull-up resistor
must be connected in order to output high level.
is selected is determined separately.
selected, and the lower of V
When a pin is in output mode, the output voltage is equivalent to the applied voltage.
selected, and the lower of V
When a pin is in output mode, the output voltage is equivalent to the applied voltage.
on V
CC
.
CC
CC
B + 0.3 V and AV
+ 0.3 V and AV
CC
B, and the other pins characteristics depend
CC
Rev. 3.00 Mar 21, 2006 page 733 of 788
CC
+ 0.3 V when CIN input is selected.
CC
CC
+ 0.3 V when CIN input is selected.
B + 0.3 V when CIN input is not
+ 0.3 V when CIN input is not
Section 27 Electrical Characteristics
REJ09B0300-0300
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