DF2161BVTE10 Renesas Electronics America, DF2161BVTE10 Datasheet - Page 821

MCU 3V 128K 144-TQFP

DF2161BVTE10

Manufacturer Part Number
DF2161BVTE10
Description
MCU 3V 128K 144-TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2100r
Datasheet

Specifications of DF2161BVTE10

Core Processor
H8S/2000
Core Size
16-Bit
Speed
10MHz
Connectivity
Host Interface (LPC), I²C, IrDA, SCI, X-Bus
Peripherals
PWM, WDT
Number Of I /o
114
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.6 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
144-TQFP, 144-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2161BVTE10
HD64F2161BVTE10
27.3.3
The bus timings are shown below.
Note: * AS and IOS are the same pin. The function is selected by the IOSE bit in SYSCR.
Bus Timing
A23 to A0,
IOS *
AS *
RD
(read)
D15 to D0
(read)
HWR, LWR
(write)
D15 to D0
(write)
Figure 27.11 Basic Bus Timing (Two-State Access)
t
CSD
t
AD
t
t
t
AS
AS
AS
T
t
t
1
t
RSD1
WRD2
WDD
t
ASD
t
ACC3
t
WSW1
t
ACC2
t
ASD
Rev. 3.00 Mar 21, 2006 page 765 of 788
T
t
2
WRD2
Section 27 Electrical Characteristics
t
RDS
t
WDH
t
t
AH
AH
t
RDH
t
RSD2
REJ09B0300-0300

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