DF2398TE20 Renesas Electronics America, DF2398TE20 Datasheet - Page 667

IC H8S MCU FLASH 256K 120TQFP

DF2398TE20

Manufacturer Part Number
DF2398TE20
Description
IC H8S MCU FLASH 256K 120TQFP
Manufacturer
Renesas Electronics America
Series
H8® H8S/2300r
Datasheets

Specifications of DF2398TE20

Core Processor
H8S/2000
Core Size
16-Bit
Speed
20MHz
Connectivity
SCI, SmartCard
Peripherals
DMA, POR, PWM, WDT
Number Of I /o
87
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
4.5 V ~ 5.5 V
Data Converters
A/D 8x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-20°C ~ 75°C
Package / Case
120-TQFP, 120-VQFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Other names
HD64F2398TE20
HD64F2398TE20

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DF2398TE20V
Manufacturer:
Renesas Electronics America
Quantity:
10 000
Notes: 1. Mode pins input must satisfy the mode programming setup time (t
19.17.2 User Program Mode
When set to user program mode, the chip can program and erase its flash memory by executing a user program/erase
control program. Therefore, on-board reprogramming of the on-chip flash memory can be carried out by providing on-
board means supply of programming data, and storing a program/erase control program in part of the program area if
necessary.
To select user program mode, select a mode that enables the on-chip flash memory (mode 6 or 7). In this mode, on-chip
supporting modules other than flash memory operate as they normally would in modes 6 and 7.
The flash memory itself cannot be read while the SWE bit is set to 1 to perform programming or erasing, so the control
program that performs programming and erasing should be run in on-chip RAM or external memory. When the program is
located in external memory, an instruction for programming the flash memory and the following instruction should be
located in on-chip RAM.
Figure 19-47 shows the procedure for executing the program/erase control program when transferred to on-chip RAM.
Do not change the mode pin input levels in boot mode.
If the mode pin input levels are changed (for example, from low to high) during a reset, the state of ports with
multiplexed address functions and bus control output pins (AS, RD, HWR) will change according to the change in the
microcomputer’s operating mode*
Therefore, care must be taken to make pin settings to prevent these pins from becoming output signal pins during a
reset, or to prevent collision with signals outside the microcomputer.
2. See Appendix D, Pin States.
timing.
Note: The watchdog timer should be activated to prevent overprogramming or overerasing
due to program runaway, etc.
Figure 19-47 User Program Mode Execution Procedure
2
.
Write the transfer program
(and the program/erase control
program if necessary) beforehand
Branch to flash memory application
program (flash memory rewriting)
Branch to program/erase control
Transfer program/erase control
Execute program/erase control
MD2, MD1, MD0 = 110, 111
program in RAM area
program to RAM
Reset-start
program
MDS
= 200 ns) with respect to the reset release
Rev.6.00 Oct.28.2004 page 637 of 1016
REJ09B0138-0600H

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